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A3212ELHLT 데이터시트 PDF




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부품번호 A3212ELHLT 기능
기능 MICROPOWER/ ULTRA-SENSITIVE HALL-EF FECT SWITCH
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A3212ELHLT 데이터시트, 핀배열, 회로
A3212
Package Sufx ‘LH’ Pinning
(SOT23W)
3
V
DD
1
2
Dwg. PH-016-1
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD .............................. 5 V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, VOUT ...................... 5 V
Output Current, IOUT ........................... 1 mA
Junction Temperature, TJ ................ +170°C
Operating Temperature, TA
Range 'E-' .................... -40°C to +85°C
Range 'L-' .................. -40°C to +150°C
Storage Temperature Range,
TS .............................. -65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-
effect switch with a latched digital output. This sensor is especially suited for
operation in battery-operated, hand-held equipment such as cellular and cordless
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average operating power requirements to less
than 15 µW with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of sufcient
strength will turn the output on; in the absence of a magnetic eld, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic
offset cancellation), which reduces the residual offset voltage normally caused
by device overmolding, temperature dependencies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator,
small-signal amplier, chopper stabilization, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors, and
small component geometries.
Three package styles provide a magnetically optimized package for most ap-
plications. Package sufxes 'EH' and ‘LH’ are for miniature low-prole (lead-
less and leaded, respectively) surface-mount packages while sufx ‘UA’ is for
a three-lead SIP for through-hole mounting. Each package is available in a lead
(Pb) free version (sufx, –T) with 100% matte tin plated leadframe.
FEATURES
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence




A3212ELHLT pdf, 반도체, 판매, 대치품
A3212
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCH
ELECTRICAL CHARACTERISTICS over operating voltage and temperature range (unless
otherwise specified).
Limits
Characteristic
Symbol
Test Conditions
Min. Typ. Max. Units
Supply Voltage Range
Output Leakage Current
Output On Voltage
Awake Time
Period
Duty Cycle
VDD
IOFF
VOUT
tawake
tperiod
d.c.
Operating1
VOUT = 3.5 V, BRPN < B < BRPS
IOUT = 1 mA, VDD = 2.75 V
2.5
2.75
<1.0
100
45
45
0.1
3.5
1.0
300
90
90
V
µA
mV
µs
ms
%
Chopping Frequency
Supply Current
fC
IDD(EN)
IDD(DIS)
IDD(AVG)
Chip awake (enabled)
Chip asleep (disabled)
VDD = 2.75 V
– 340 – kHz
– – 2.0 mA
– – 8.0 µA
– 5.1 10 µA
VDD = 3.5 V
– 6.7 10 µA
NOTES: 1. Operate and release points will vary with supply voltage.
2. BOPx = operate point (output turns on); BRPx = release point (output turns off).
3. Typical Data is at TA = +25°C and VDD = 2.75 V and is for design information only.
MAGNETIC CHARACTERISTICS over operating voltage and temperature range (unless
otherwise specified).
Limits
Characteristic
Symbol
Test Conditions
Min. Typ. Max.
Operate Points
Release Points
Hysteresis
BOPS
BOPN
BRPS
BRPN
Bhys
South pole to branded side
North pole to branded side
South pole to branded side
North pole to branded side
|BOPx - BRPx|
– 37 55
-55 -40
10 31
– -34 -10
– 5.9 –
Units
G
G
G
G
G
NOTES: 1. Negative flux densities are defined as less than zero (algebraic convention), i.e., -50 G is less than +10 G.
2. BOPx = operate point (output turns on); BRPx = release point (output turns off).
3. Typical Data is at TA = +25°C and VDD = 2.75 V and is for design information only.
4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).
115 Northeast Cutoff, Box 15036
4 Worcester, Massachusetts 01615-0036 (508) 853-5000

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A3212ELHLT 전자부품, 판매, 대치품
3212
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCH
FUNCTIONAL DESCRIPTION (cont'd)
Operation. The output of this device switches low (turns on)
when a magnetic eld perpendicular to the Hall sensor exceeds
the operate point BOPS (or is less than BOPN). After turn-on, the
output is capable of sinking up to 1 mA and the output voltage is
VOUT(ON). When the magnetic eld is reduced below the release
point BRPS (or increased above BRPN), the device output switch-
es high (turns off). The difference in the magnetic operate and
release points is the hysteresis (Bhys) of the device. This built-in
hysteresis allows clean switching of the output even in the pres-
ence of external mechanical vibration and electrical noise.
As used here, negative ux densities are dened as less than
zero (algebraic convention), i.e., -50 G is less than +10 G.
Applications. Allegro's pole-independent sensing technique
allows for operation with either a north pole or south pole mag-
net orientation, enhancing the manufacturability of the device.
The state-of-the-art technology provides the same output polarity
for either pole face.
It is strongly recommended that an external bypass capacitor
be connected (in close proximity to the Hall sensor) between the
supply and ground of the device to reduce both external noise
and noise generated by the chopper-stabilization technique. This
is especially true due to the relatively high impedance of battery
supplies.
The simplest form of magnet that will operate these devices
is a bar magnet with either pole near the branded surface of the
device. Many other methods of operation are possible. Exten-
sive applications information for Hall-effect sensors is available
in:
Hall-Effect IC Applications Guide, Application Note 27701;
Hall-Effect Devices: Soldering, Gluing, Potting, Encapsu-
lating, and Lead Forming, Application Note 27703.1;
Soldering of Through-Hole Hall-Sensor Dervices, Application
Note 27703; and
Soldering of Surface-Mount Hall-Sensor Devices, Application
Note 27703.2.
All are provided at
www.allegromicro.com
5V
MAX
0
-B
B OPN
OUTPUT OFF
B OPS
BRPN
BRPS
0
MAGNETIC FLUX
OUTPUT ON
+B
Dwg. GH-043-1
10 pF
OUTPUT
0.1 µF
SUPPLY
(3 V BATTERY)
Dwg. EH-013-2
www.allegromicro.com
7

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