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부품번호 | A420616V-45U 기능 |
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기능 | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE | ||
제조업체 | AMIC Technology | ||
로고 | |||
A420616 Series
Preliminary
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial issue
Modify AC, DC data
Modify DC data and all parts guarantee self-refresh mode
Issue Date
June 23, 1999
February 7, 2002
June 10, 2002
Remark
Preliminary
PRELIMINARY (June, 2002, Version 0.2)
AMIC Technology, Inc.
Block Diagram
RAS
UCAS
LCAS
WE
Control
Clocks
VBB Generator
Vcc
Vss
A0~A9
A0~A9
Refresh Timer
Refresh control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
1,048,576 x 16
Cells
Column Decoder
A420616 Series
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
I/O0
to
I/O7
OE
I/O8
to
I/O15
Recommended Operating Conditions (Ta = 0°C to +70°C or -40°C to +85°C)
Symbol
Description
Min.
Typ.
Max.
VCC
Power Supply
4.5 5.0 5.5
VSS
Input High Voltage
0.0 0.0 0.0
VIH Input High Voltage
2.4 - VCC + 1.0
VIL Input Low Voltage
-0.5 - 0.8
Unit
V
V
V
V
Notes
1
1
1
1
PRELIMINARY (June, 2002, Version 0.2)
3
AMIC Technology, Inc.
4페이지 A420616 Series
AC Characteristics (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=2.4V/0.8V
Output reference level: VOH/VOL=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed tT=2ns
Std
# Symbol
Parameter
tT Transition Time (Rise and Fall)
-45
Min. Max.
1 50
-50
Min. Max.
1 50
1 tRC Random Read or Write Cycle Time
76 - 84 -
2 tRP RAS Precharge Time
27 - 30 -
3 tRAS RAS Pulse Width
45 10K 50 10K
4 tCAS CAS Pulse Width
7 10K 8 10K
5 tRCD RAS to CAS Delay Time
10 33 11 37
6 tRAD RAS to Column Address Delay Time
8 25 9 28
7 tRSH CAS to RAS Hold Time
7-8-
8 tCSH CAS Hold Time
35 - 37 -
9 tCRP CAS to RAS Precharge Time
5-5-
10 tASR Row Address Setup Time
0-0-
11 tRAH Row Address Hold Time
7-8-
12 tCLZ CAS to Output in Low Z
3-3-
13 tRAC Access Time from RAS
- 45 - 50
14 tCAC Access Time from CAS
- 12 - 13
15 tAA Access Time from Column Address
- 20 - 22
16 tOEA OE Access Time
- 12 - 13
17 tAR Column Address Hold Time from RAS
40 - 45 -
18 tRCS Read Command Setup Time
0-0-
19 tRCH Read Command Hold Time
0-0-
Unit Notes
ns 4, 5
ns
ns
ns
ns
ns 6
ns 7
ns
ns
ns
ns
ns
ns 8
ns 6,7
ns 6, 13
ns 7, 13
ns
ns
ns
ns 9
PRELIMINARY (June, 2002, Version 0.2)
6
AMIC Technology, Inc.
7페이지 | |||
구 성 | 총 25 페이지수 | ||
다운로드 | [ A420616V-45U.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
A420616V-45 | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE | AMIC Technology |
A420616V-45U | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE | AMIC Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |