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부품번호 | A616316S 기능 |
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기능 | 64K X 16 BIT HIGH SPEED CMOS SRAM | ||
제조업체 | AMIC Technology | ||
로고 | |||
A615308 Series
Preliminary
32K X 8 BIT HIGH SPEED CMOS SRAM
Document Title
32K X 8 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No. History
0.0 Initial issue
Issue Date
January 17, 2001
Remark
PRELIMINARY (January, 2001, Version 0.0)
AMIC Technology, Inc.
Recommended DC Operating Conditions
(TA = 0°C to + 70°C)
Symbol
Parameter
Min.
VCC
Supply Voltage
4.5
GND
Ground
0
VIH
Input High Voltage
2.2
VIL
Input Low (1) Voltage
-0.5
CL Output Load
-
A615308 Series
Typ.
5.0
0
3.5
0
-
Max.
5.5
0
VCC + 0.5
+0.8
30
Unit
V
V
V
V
pF
Absolute Maximum Ratings*
*Comments
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V
IN, IN/OUT Volt to GND . . . . . . . . . . -0.5V to VCC +0.5V
Operating Temperature, Topr . . . . . . . . . . . 0°C to +70°C
Storage Temperature, Tstg . . . . . . . . . . -55°C to +125°C
Temperature Under Bias, Tbias . . . . . . . . -10°C to +85°C
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute maximum
rating conditions for extended periods may affect device
reliability.
DC Electrical Characteristics (TA = 0°C to + 70°C, VCC = 5V ± 10%, GND = 0V)
Symbol
Parameter
ILI
Input Leakage
A615308-12
Min.
Max.
-2
Unit Conditions
µA VIN = GND to VCC
ILO
Output Leakage
ICC1 (2)
ISB
ISB1
Dynamic Operating
Current
Standby Power
Supply Current
VOL Output Low Voltage
VOH Output High Voltage
- 2 µA CE = VIH or OE = VIH
VI/O = GND to VCC
- 150 mA CE = VIL, II/O = 0 mA
Min. Cycle, Duty = 100%
- 35 mA CE = VIH
CE ≥ VCC - 0.2V
- 12 mA VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
- 0.4 V IOL = 8 mA
2.4 -
V IOH = -4 mA
Notes: 1. VIL = -3.0V for pulses less than 20 ns.
2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.
PRELIMINARY (January, 2001, Version 0.0)
3
AMIC Technology, Inc.
4페이지 Timing Waveforms (continued)
Read Cycle 2(1, 2, 4)
Address
DOUT
tRC
tAA
tOH
Read Cycle 3(1, 3, 4,)
CE
DOUT
tCLZ5
tACE
A615308 Series
tOH
tCHZ5
Notes: 1. WE is high for Read Cycle.
2. Device is continuously enabled, CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.
PRELIMINARY (January, 2001, Version 0.0)
6
AMIC Technology, Inc.
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ A616316S.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
A616316 | 64K X 16 BIT HIGH SPEED CMOS SRAM | AMIC Technology |
A616316S | 64K X 16 BIT HIGH SPEED CMOS SRAM | AMIC Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |