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부품번호 | A6173081S-12 기능 |
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기능 | 128K X 8 BIT HIGH SPEED CMOS SRAM | ||
제조업체 | AMIC Technology | ||
로고 | |||
A617308 Series
Preliminary
128K X 8 BIT HIGH SPEED CMOS SRAM
Document Title
128K X 8 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial issue
Change VDR(Max.) from 3.6V to 5.5V
Add 32-pin SOP package
Modify 32-pin SOJ package outline drawing and
Dimensions
Add 15ns part
Change operating current from 180mA to 150mA (Max.)
Change VDR(Min.) from 2V to 3V
Remove 32-pin SOP package
Issue Date
September 17, 1999
November 30, 1999
Remark
Preliminary
January 19, 2000
PRELIMINARY (January, 2000, Version 0.2)
AMIC Technology, Inc.
Recommended DC Operating Conditions
(TA = 0°C to + 70°C)
Symbol
Parameter
Min.
VCC
Supply Voltage
4.5
GND
Ground
0
VIH Input High Voltage 2.2
VIL
Input Low (1) Voltage
-0.5
CL Output Load
-
A617308 Series
Typ.
5.0
0
-
0
-
Max.
5.5
0
VCC + 0.5
+0.8
30
Unit
V
V
V
V
pF
Absolute Maximum Ratings*
*Comments
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V
IN, IN/OUT Volt to GND . . . . . . . . . . -0.5V to VCC +0.5V
Operating Temperature, Topr . . . . . . . . . . . 0°C to +70°C
Storage Temperature, Tstg . . . . . . . . . . -55°C to +125°C
Temperature Under Bias, Tbias . . . . . . . . -10°C to +85°C
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute maximum
rating conditions for extended periods may affect device
reliability.
DC Electrical Characteristics (TA = 0°C to + 70°C, VCC = 5V ± 10%, GND = 0V)
Symbol
Parameter
ILI
Input Leakage
A617308-10/12/15
Min.
Max.
-5
Unit Conditions
µA VIN = GND to VCC
ILO
Output Leakage
- 5 µA CE1 = VIH, CE2= VIL or OE = VIH
VI/O = GND to VCC
ICC1 (2) Dynamic Operating Current
ISB
Standby Power
ISB1 Supply Current
VOL Output Low Voltage
VOH Output High Voltage
- 150 mA CE1 = VIL, CE2 = VIH , II/O = 0 mA
Min. Cycle, Duty = 100%
- 35 mA CE1 = VIH or CE2 = VIL
- 12 mA CE1 ≥ VCC - 0.2V, CE2 ≤ 0.2V
VIN ≥ VCC -0.2V or VIN ≤ 0.2V
- 0.4 V IOL = 8 mA
2.4 - V IOH = -4 mA
Notes: 1. VIL = -3.0V for pulses less than 20 ns.
2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.
PRELIMINARY (January, 2000, Version 0.2)
3
AMIC Technology, Inc.
4페이지 Timing Waveforms (continued)
Read Cycle 2(1, 2, 4)
Address
DOUT
tRC
tAA
tOH
Read Cycle 3(1, 3, 4, 6)
CE1
DOUT
tCLZ 5
tACE
A617308 Series
tOH
tCHZ 5
PRELIMINARY (January, 2000, Version 0.2)
6
AMIC Technology, Inc.
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ A6173081S-12.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
A6173081S-12 | 128K X 8 BIT HIGH SPEED CMOS SRAM | AMIC Technology |
A6173081S-15 | 128K X 8 BIT HIGH SPEED CMOS SRAM | AMIC Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |