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PDF CS5301GDW32 Data sheet ( Hoja de datos )
| Número de pieza | CS5301GDW32 | |
| Descripción | Three-Phase Buck Controller with Integrated Gate Drivers and Power Good | |
| Fabricantes | ON Semiconductor | |
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CS5301
Three-Phase
Buck Controller with
Integrated Gate Drivers and
Power Good
The CS5301 is a three–phase step down controller which
incorporates all control functions required to power high performance
processors and high current power supplies. Proprietary multi–phase
architecture guarantees balanced load current distribution and reduces
overall solution cost in high current applications. Enhanced V2™
control architecture provides the fastest possible transient response,
excellent overall regulation, and ease of use.
The CS5301 multi–phase architecture reduces output voltage and
input current ripple, allowing for a significant reduction in inductor
values and a corresponding increase in inductor current slew rate. This
approach allows a considerable reduction in input and output capacitor
requirements, as well as reducing overall solution size and cost.
Features
• Enhanced V2 Control Method
• 5–Bit DAC with 1% Accuracy
• Adjustable Output Voltage Positioning
• 6 On–Board Gate Drivers
• 200 kHz to 800 kHz Operation Set by Resistor
• Current Sensed through Buck Inductors, Sense Resistors, or V–S
Control
• Hiccup Mode Current Limit
• Individual Current Limits for Each Phase
• On–Board Current Sense Amplifiers
• 3.3 V, 1.0 mA Reference Output
• 5.0 V and/or 12 V Operation
• On/Off Control (through COMP Pin)
• Power Good Output
http://onsemi.com
32
1
SO–32L
DW SUFFIX
CASE 751P
MARKING DIAGRAM
32
CS5301
AWLYYWW
1
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
PIN CONNECTIONS
1
COMP
VFB
VDRP
CS1
CS2
CS3
CSREF
PWRGD
VID0
VID1
VID2
VID3
VID4
PWRGDS
ILIM
REF
32
ROSC
VCCL
VCCL1
GATE(L)1
GND1
Gate(H)1
VCCH12
Gate(H)2
GND2
Gate(L)2
VCCL23
Gate(L)3
GND3
Gate(H)3
VCCH3
LGND
ORDERING INFORMATION
Device
Package
Shipping
CS5301GDW32
SO–32L 22 Units/Rail
CS5301GDWR32 SO–32L 1000 Tape & Reel
© Semiconductor Components Industries, LLC, 2002
October, 2002 – Rev. 11
1
Publication Order Number:
CS5301/D
1 page  
CS5301
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < 70°C; 0°C < TJ < 125°C; 4.7 V < VCCL < 14 V; 8.0 V < VCCH < 20 V;
CGATE(H) = 3.3 nF, CGATE(L) = 3.3 nF, RROSC = 53.6 k, CCOMP = 0.1 µF, CREF = 0.1 µF, DAC Code 10000, CVCC = 1.0 µF, ILIM ≥ 1.0 V;
unless otherwise specified.)
Characteristic
Test Conditions
Min Typ Max Unit
Power Good Output
111
0
1
–
0.950
0.975
1.000
V
11100
–
0.974
1.000
1.025
V
11011
–
0.998
1.024
1.050
V
11010
–
1.021
1.048
1.075
V
11001
–
1.045
1.073
1.100
V
11000
–
1.069
1.097
1.125
V
10111
–
1.093
1.122
1.150
V
10110
–
1.116
1.146
1.175
V
10101
–
1.140
1.170
1.200
V
10100
–
1.164
1.195
1.225
V
10011
–
1.188
1.219
1.250
V
10010
–
1.211
1.243
1.275
V
10001
–
1.235
1.268
1.300
V
10000
–
1.259
1.292
1.325
V
01111
–
1.283
1.316
1.350
V
01110
–
1.306
1.341
1.375
V
01101
–
1.330
1.365
1.400
V
01100
–
1.354
1.389
1.425
V
01011
–
1.378
1.414
1.450
V
01010
–
1.401
1.438
1.475
V
01001
–
1.425
1.463
1.500
V
01000
–
1.449
1.487
1.525
V
00111
–
1.473
1.511
1.550
V
00110
–
1.496
1.536
1.575
V
00101
–
1.520
1.560
1.600
V
00100
–
1.544
1.584
1.625
V
00011
–
1.568
1.609
1.650
V
00010
–
1.591
1.633
1.675
V
00001
–
1.615
1.658
1.700
V
00000
–
1.639
1.682
1.725
V
Switch Leakage Current
PWRGD = 5.5 V
PWRGDS = 1.60 V
– 0.1 10.0 µA
Delay
PWRGDS low to PWRGD low
25
50 125 µs
Output Low Voltage
PWRGDS = 1.0 V
IPWRGD = 4.0 mA
– 0.15 0.40 V
http://onsemi.com
5
5 Page 
900
800
700
600
500
400
300
200
100
10
CS5301
TYPICAL PERFORMANCE CHARACTERISTICS
25
20
15
10
5
20 30 40 50 60
RROSC Value, kΩ
Figure 3. Oscillator Frequency
70
0
10 20
30 40 50 60
RROSC Value, kΩ
70
80
Figure 4. VFB Bias Current vs. RROSC Value
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16
Load Capacitance, nF
Figure 5. Gate(H) Rise–time vs. Load Capacitance
measured from 1.0 V to 4.0 V with VCC at 5.0 V.
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16
Load Capacitance, nF
Figure 6. Gate(H) Fall–time vs. Load Capacitance
measured from 4.0 V to 1.0 V with VCC at 5.0 V.
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16
Load Capacitance, nF
Figure 7. Gate(L) Rise–time vs. Load Capacitance
measured from 4.0 V to 1.0 V with VCC at 5.0 V.
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16
Load Capacitance, nF
Figure 8. Gate(L) Fall–time vs. Load Capacitance
measured from 4.0 V to 1.0 V with VCC at 5.0 V.
http://onsemi.com
11
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| PDF Descargar | [ Datasheet CS5301GDW32.PDF ] | |
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