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부품번호 | CS86 기능 |
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기능 | The CS86 series of 0.18 mm standard cells is a line of CMOS ASICs based on higher integration implemented | ||
제조업체 | Fujitsu Media Devices Limited | ||
로고 | |||
전체 16 페이지수
FUJITSU SEMICONDUCTOR
DATA SHEET
DS06-20209-2E
Semicustom
CMOS
Standard cell
CS86 Series
s DESCRIPTION
The CS86 series of 0.18 µm standard cells is a line of CMOS ASICs based on higher integration implemented
by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
series.
The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,
from portable devices requiring low power consumption to image processors requiring large-scale circuitry and
high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-
mented which require low power consumption as well as high-speed operation for certain types of processing.
s FEATURES
• Technology
: 0.18 µm silicon-gate CMOS, 4- to 6-layer wiring
The same chip can therefore incorporate the standard transistor cell and the ultrahigh-
speed or low-leakage process cell together.
• Supply voltage
: +1.8 V ± 0.15 V (normal) to +1.1 V ± 0.1 V
• Junction temperature range : −40 °C to +125 °C
• Cell set
CS86MN : Offers standard transistor characteristics. Designed as a library for products requiring higher
throughputs.
CS86MZ : Offers transistor characteristics for ultra high-speed operation. Designed as a library for
products that require higher processing speeds than those provided by CS86MN.
CS86ML : Offers transistor charactersistics with less leak current. Designed as a library for mobile
devices and other products requiring lower power consumption.
• Cell Specifications :
Cell set name
CS86MZ
CS86MN
CS86ML
Delay time*1
70 ps
88 ps
136 ps
Power consumption*2 42.7 nW/MHz 40.1 nW/MHz 38.3 nW/MHz
Leak power*3
3.922 nW
0.023 nW
0.0067 nW
*1 : 2 input NAND cell (low-power type) , F/O = 2, normal load, Power supply voltage 1.8 V, Temperature = +25 °C
*2 : 2 input NAND cell (low-power type) , F/O = 1, 4 Grid, Power supply voltage 1.8 V, Temperature = +25 °C
*3 : 2 input NAND cell (low-power type) , F/O = 0, non load, Power supply voltage 1.8 V, Temperature = +25 °C
(Continued)
CS86 Series
s COMPILED CELLS
Compiled cells are macro cells which are automatically generated with the bit/word configuration specified. The
CS86 series has the following types of compiled cells. (Note that each macro is different in word/bit range
depending on the column type.)
1. Clock synchronous single-port RAM (1 address : 1 RW)
• High density type/High density partial write type
Column type
Memory capacity
Word range
4
16 to 72 K
16 to 1 K
16
64 to 72 K
64 to 4 K
Bit range
1 to 72
1 to 18
Unit
bit
bit
• Super high density type/Super high density partial write type
Column type
Memory capacity
Word range
4
64 to 144 K
32 to 2 K
Bit range
2 to 72
Unit
bit
• Large scale partial write type
Column type
Memory capacity
16 24 to 1152 K
Word range
4K to 16 K
Bit range
6 to 72
Unit
bit
• Super high density large scale partial write type
Column type
Memory capacity
Word range
16
2 to 1152 K
512 to 16 K
Bit range
4 to 72
Unit
bit
• High speed type
Column type
8
Memory capacity
256 to 144 K
Word range
64 to 2 K
Bit range
4 to 72
Unit
bit
2. Clock synchronous dual-port RAM (2 addresses : 1 RW, 1 R)
• High density type/Partial write type
Column type
Memory capacity
Word range
Bit range
4
16 to 72 K
16 to 1 K
1 to 72
16
64 to 72 K
64 to 4 K
1 to 18
Unit
bit
bit
3. Clock synchronous register file (3 addresses : 1 W, 2 R)
Column type
Memory capacity
Word range
1
4 to 4608
4 to 64
Bit range
1 to 72
Unit
bit
4. Clock synchronous register file (4 addresses : 2 W, 2 R)
Column type
Memory capacity
Word range
1
4 to 4608
4 to 64
Bit range
1 to 72
Unit
bit
4
4페이지 CS86 Series
(b) Current value that one I/O can provide to the core
Tj = +125°C*2
Frame
Source type
Maximum current (at standard source) (mA) Number of layers
VDDI, VDD, VSS
YH VDDI, VDD, VSS
VDDI, VDD, VSS
34
34
59
4
5
6
*1 : Maximum current for one I/O includes the supply current to the I/O part and the core part.
*2 : The current values change according to the junction temperature. When the junction temperature is not +125°C,
multiply the value by the following coefficients.
Tj = +111°C to +125°C : 1.0
Tj = + 91°C to +110°C : 1.4
Tj = + 90°C : 2.8
Note : How to calculate the number of required supply pins
In case of a frame with 6-layer wiring (2 power supplies)
• Maximum current for one VDD/GND pin
VDDE = 59 mA/pin calucurated using the value in “(a) Maximum supply pin current for one I/O”
VDDI = VSS = 59 mA/pin calucurated using the value in “(b) Current value that one I/O can provide to the core”
• Needed supply pin count (internal power supply/external power supply/VSS) : Ni/Ne/Ns
DC internal maximum power-supply current : Iimax, DC external maximum power-supply current : Iemax
Ni = Iimax/59mA, Ne = Iemax/59mA, Ns = Iimax/59mA + Iemax/59mA
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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