(PDF) AT-64023 Datasheet - Up to 4 GHz Linear Power Silicon Bipolar Transistor

Número de pieza	AT-64023
Descripción	Up to 4 GHz Linear Power Silicon Bipolar Transistor
Fabricantes	Agilent(Hewlett-Packard)
Logotipo
Hay una vista previa y un enlace de descarga de AT-64023 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 12.5 dB Typical G1dBat 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz • 35% Total Efficiency • Emitter Ballast Resistors • Hermetic, Metal/Beryllia Stripline Package Description The AT-64023 is a high perfor- mance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applica- tions operating over VHF, UHF and microwave frequencies. 230 mil BeO Package Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 4-183 5965-8916E 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet AT-64023.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF AT-64023 Data sheet ( Hoja de datos )