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PDF ARF1500 Data sheet ( Hoja de datos )

Número de pieza ARF1500
Descripción RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! ARF1500 Hoja de datos, Descripción, Manual

S DS
ARF1500
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
ARF1500
BeO
135-05
G
SGS
125V 900W
D
S
40MHz
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF
power generator and amplifier applications up to 40 MHz.
• Specified 150 Volt, 27.12 MHz Characteristics:
• Output Power = 900 Watts.
• Gain = 17dB (Class C)
• Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
VDSS
VDGO
ID
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF 1500
UNIT
500
Volts
500
60 Amps
±30 Volts
1500
Watts
-55 to 200
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
VDS(ON)
IDSS
IGSS
gfs
Visolation
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Voltage 1 (ID(ON) = 30A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 30A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
MIN
500
3
2500
3
TYP
5.8
MAX UNIT
5.5
100
1000
±400
5
Volts
µA
nA
mhos
Volts
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
0.09
MAX
0.12
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE: Chemin de Magret
F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

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