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ARF2012 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ARF2012
기능 FAST RECOVERY DIODE
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ARF2012 데이터시트, 핀배열, 회로
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
ARF2012
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current =3400 A
SWITCHING
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
s Softness (s-factor), min
V FR
Peak forward recovery
I F = 1000 A
di/dt= 100 A/µs
VR = 100 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF2012 S 26
standard specification
VRRM/100
2600 V
1525 A
16 kA
Tj
[°C] Value Unit
150 2600
150 2700
150 50
V
V
mA
1525
A
1545
A
150 16
kA
1280 x1E3 A²s
25 2.5
V
150 1.03
V
150 0.362 mohm
4.6
150 800
345
0.4
150 13
µs
µC
A
V
26 °C/kW
-30 / 150 °C
18.0 / 20.0 kN
500 g




ARF2012 pdf, 반도체, 판매, 대치품
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 04
ANSALDO
FORWARD CHARACTERISTIC
Tj = 150 °C
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.6
1.1 1.6 2.1
Forward Voltage [V]
2.6
16
14
12
10
8
6
4
2
0
1
SURGE CHARACTERISTIC
Tj = 150 °C
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1 1
t[s]
10 100
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by

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ARF2012

FAST RECOVERY DIODE

Power Semiconductors
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ARF2012S26

FAST RECOVERY DIODE

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