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Número de pieza | ARF442 | |
Descripción | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ARF442 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TO-247
G
ARF442 200W 100V 13.56MHz
S ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
RF OPERATION (1-15MHz)
POWER MOS IV®
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
• Specified 100 Volt, 13.56 MHz Characteristics: • Low Cost Common Source RF Package.
• Output Power = 200 Watts.
• Very High Breakdown for Improved Ruggedness.
• Gain = 22dB (Typ.)
• Low Thermal Resistance.
• Efficiency = 73% (Typ.)
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RθJC
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF442/443
UNIT
300
Volts
300
8 Amps
±30 Volts
167 Watts
0.75
°C/W
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
VDS(ON) On State Drain Voltage 1 (ID(ON) = 6.5A, VGS = 10V)
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS
gfs
VGS(TH)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 5.5A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
MIN
300
3.5
2
TYP MAX UNIT
Volts
6
250
1000
µA
±100 nA
4.5 mhos
5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ARF442.PDF ] |
Número de pieza | Descripción | Fabricantes |
ARF440 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET | Advanced Power Technology |
ARF441 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET | Advanced Power Technology |
ARF442 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET | Advanced Power Technology |
ARF443 | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET | Advanced Power Technology |
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