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부품번호 | ARF463A 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE | ||
제조업체 | Advanced Power Technology | ||
로고 | |||
전체 4 페이지수
D ARF463A
G
S TO-247
ARF463B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
125V 100W 100MHz
The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 81.36 MHz Characteristics: • Low Cost Common Source RF Package.
• Output Power = 100 Watts.
• Low Vth thermal coefficient.
• Gain = 15dB (Class AB)
• Low Thermal Resistance.
• Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
YMAXIMUM RATINGS
RSymbol Parameter
AVDSS
INVDGO
ID
IMVGS
LPD
ERqJC
PRTJ,TSTG
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specified.
ARF463A/B
UNIT
500
Volts
500
9 Amps
±30 Volts
180 Watts
0.50
°C/W
-55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
VDS(ON) On State Drain Voltage 1 (ID(ON) = 4.5A, VGS = 10V)
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS
gfs
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 4.5A)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
500
2
3
5.0
25
250
±100
3
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
µA
nA
mhos
Volts
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Bias
0 - 12V
RF
Input C2
C3
C7
L1
R2
L3
R1
C1
L4
C5
C8
L2
+
- 125V
C6
RF
C4 Output
C5
ARF463A/B
C1 -- 820pF Unelco mounted at
gate lead
C2-C5 -- Arco 463 Mica trimmer
C5-C8 -- 10nF 500V COG chip
L1 -- 3t #18 .3" ID .25"L ~50nH
L2 -- 3t #16 AWG .25" ID .3"L ~58nH
L3 -- 10t #18 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF463A/B
DUT
81.36 MHz Test Circuit
ELIMINARY4.69(.185)
5.31 (.209)
R1.49 (.059)
P2.49 (.098)
TO-247 Package Outline
Top View
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
20.80 (.819)
21.46 (.845)
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Device
ARF - A ARF - B
Gate
Drain
Source
Source
Drain
Gate
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ ARF463A.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ARF463 | Fast Recovery Diode ( Rectifier ) | Power Semiconductors |
ARF463A | N-CHANNEL ENHANCEMENT MODE | Advanced Power Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |