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Datasheet ARF464B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ARF464B | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE D G S
TO-247
ARF464A ARF464B
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz
The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up t |  Advanced Power Technology | mosfet |
ARF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ARF1500 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE S
D
S
ARF1500
D G S
ARF1500
BeO 135-05
RF POWER MOSFET
Specified 150 Volt, 27.12 MHz Characteristics: Output Power = 900 Watts. Gain = 17dB (Class C) Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous D Advanced Power Technology mosfet | | |
| 2 | ARF1501 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE S
D
S
ARF1501
D G S
ARF1500
BeO 135-05
RF POWER MOSFET
Specified 300 Volt, 27.12 MHz Characteristics: Output Power = 900 Watts. Gain = 17dB (Class C) Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous D Advanced Power Technology mosfet | | |
| 3 | ARF1502 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE S
D
S
ARF1502
D G S
ARF1500
BeO 135-05
RF POWER MOSFET
Specified 65 Volt, 27.12 MHz Characteristics: Output Power = 900 Watts. Gain = 17dB (Class C) Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter
N - CHANNEL ENHANCEMENT MODE
S
G
S
65V
1500W 40 Advanced Power Technology mosfet | | |
| 4 | ARF1505 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET S
D
S
ARF1505
D G S
ARF1505
BeO 1525-xx
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE • Specified 300 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Dra Advanced Power Technology mosfet | | |
| 5 | ARF2012 | Fast Recovery Diode, Rectifier, ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF2012
Repetitive voltage up to Mean forward current Surge current 2600 V 1525 A 16 kA  Power Semiconductors diode | | |
| 6 | ARF2012S26 | Fast Recovery Diode, Rectifier, ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF2012
Repetitive voltage up to Mean forward current Surge current 2600 V 1525 A 16 kA Power Semiconductors diode | | |
| 7 | ARF220 | Fast Recovery Diode, Rectifier, ANSALDO
Ansaldo Trasporti s.p.a.
Via N. Lorenzi 8 - I 16152 GENOVA ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510
FAST RECOVERY DIODE
ARF220
Repetitive voltage up to Mean forward current Surge current 1400 V 445 A 5 kA
Tj [°C]
FINAL SPECIFICATION
ott 97 - ISSUE : Power Semiconductors diode | |
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