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Número de pieza | ARF664S33 | |
Descripción | Fast Recovery Diode ( Rectifier ) | |
Fabricantes | Power Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ARF664S33 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
gen 03 - ISSUE : 1
ARF664
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V DC LINK
Permanent DC voltage
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
Mean forward current
I FSM
Surge forward current
I² t I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
r F Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1570 A
SWITCHING
Q rr Reverse recovery charge
I rr Peak reverse recovery current
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
s Softness (s-factor), min
E OFF
Turn off energy dissipation
V FR
Peak forward recovery
I F = 1000 A
VR = 100 V
di/dt= 250 A/µs
I F = 1100 A
di/dt= 500 A/µs
VR =
V
di/dt= 500 A/µs
MOUNTING
R th(j-h)
Thermal impedance
R th(c-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : ARF664 S 33
standard specification
VRRM/100
3300 V
1000 A
18 kA
Tj
[°C]
Value
Unit
125 3300
125 3400
125
125 1500
V
V
mA
V
1000
A
1025
A
125 18
kA
1620 x1E3 A²s
25 3.55
V
125 1.80
V
125 0.70
mohm
125
125
2000
125 1100
125
µC
A
µs
µC
A
J
V
21 °C/kW
6 °C/kW
00 / 125
°C
22.0 / 24.5 kN
520 g
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet ARF664S33.PDF ] |
Número de pieza | Descripción | Fabricantes |
ARF664S33 | Fast Recovery Diode ( Rectifier ) | Power Semiconductors |
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