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PDF ASI10522 Data sheet ( Hoja de datos )
| Número de pieza | ASI10522 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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ASI1001
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 1001 is Designed for General
Purpose Class C Power Amplifier
Applications up to 1500 MHz.
FEATURES:
• PG = 12 dB min.at 1.0 W / 1,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCC
PDISS
TJ
TSTG
θJC
35 V
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
45 OC/W
PACKAGE STYLE .250 2L FLG
A
C
B
E
ØD
.060 x 45°
CHAMFER
G
L
HF
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .028 / 0.71
.032 / 0.81
B .740 / 18.80
C .245 / 6.22
.255 / 6.48
D .128 / 3.25
.132 / 3.35
E .125 / 3.18
F .110 / 2.79
.117 / 2.97
G .117 / 2.97
H .560 / 14.22
.570 / 14.48
I .790 / 20.07
.810 / 20.57
J .225 / 5.72
.235 / 5.97
K .165 / 4.19
.185 / 4.70
L .003 / 0.08
.007 / 0.18
M .058 / 1.47
.068 / 1.73
N .119 / 3.02
.135 / 3.43
P .149 / 3.78
.187 / 4.75
ORDER CODE: ASI10522
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICBO
VE = 28 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
15 120
UNITS
V
V
V
mA
---
COB VCB = 28 V
f = 1.0 MHz
3.2 pF
PG VCC = 28 V
ηC
POUT = 1.0 W
f = 1.0 GHz
12
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet ASI10522.PDF ] | |
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