(PDF) ASITPV593 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	ASITPV593
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.2 A VCB PDISS TJ T STG θ JC 45 V 17.5 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 10 OC/W PACKAGE STYLE .280 4L STUD 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 40 mA BVCBO IC = 10 mA BVEBO IE = 10 mA hFE VCE = 5.0 V IC = 250 mA NONE MINIMUM TYPICAL MAXIMUM 26 45 4.0 10 UNITS V V V --- Cob VCB = 28 V f = 1.0 MHz 8.0 pF PG IMD3 Po = 2.0 W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25 V IC = 410 mA f = 860 MHz Po = 2.0 W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25 V IC = 410 mA f = 860 MHz 10 12 dB -60 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF ASITPV593 Data sheet ( Hoja de datos )