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PDF AT-31625-BLK Data sheet ( Hoja de datos )
| Número de pieza | AT-31625-BLK | |
| Descripción | 4.8 V NPN Common Emitter Medium Power Output Transistor | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD3 @ Pout of
21␣ dBm per Tone, 900␣ MHz,
Typ.
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
COLLECTOR
4
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1 2 3 EMITTER
BASE
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-43
5965-5911E
1 page  
AT-31625 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE = 3.0 V, Ic = 200 mA, Tc = 25°C
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12 S22
dB Mag. Ang. Mag. Ang.
0.05
0.72 -150
30.7
34.19
113
-34.0
0.02 40
0.56 -120
0.10
0.77 -166
25.3
18.43
99
-34.0
0.02 42
0.52 -148
0.25 0.79 179
17.5 7.54 86
-28.0
0.04 57
0.51 -169
0.50 0.79 169
11.6 3.81 74
-23.1
0.07 64
0.51 -178
0.75 0.79 161
8.2 2.58 65
-20.9
0.09 63
0.52 177
0.90 0.79 156
6.7 2.17 59
-19.2
0.11 62
0.52 175
1.00 0.79 153
5.9 1.97 56
-18.4
0.12 61
0.52 174
1.25 0.79 146
4.1 1.61 48
-16.5
0.15 58
0.53 170
1.50 0.79 140
2.7 1.37 40
-14.9
0.18 54
0.54 167
1.75 0.79 133
1.7 1.21 32
-13.6
0.21 49
0.54 164
2.00 0.79 126
0.7 1.09 26
-12.8
0.23 45
0.55 160
2.25 0.79 120
0.0 1.00 19
-11.7
0.26 41
0.55 156
2.50 0.79 114
-0.6 0.93 13
-11.1
0.28 36
0.56 152
VCE = 3.6 V, Ic = 200 mA, Tc = 25°C
0.05 0.71 -148 31.2
0.10 0.76 -165 25.9
0.25 0.78 180 18.1
0.50 0.78 169 12.2
0.75 0.78 161
8.8
0.90 0.78 156
7.3
1.00 0.78 153
6.4
1.25 0.78 146
4.7
1.50 0.78 140
3.3
1.75 0.78 133
2.1
2.00 0.78 127
1.3
2.25 0.78 121
0.4
2.50 0.78 115
-0.2
VCE = 4.8 V, Ic = 200 mA, Tc = 25°C
0.05 0.70 -145 31.7
0.10 0.75 -164 26.4
0.25 0.77 -180 18.7
0.50 0.77 169 12.7
0.75 0.77 161
9.3
0.90 0.77 157
7.8
1.00 0.77 154
7.0
1.25 0.77 147
5.2
1.50 0.77 140
3.8
1.75 0.77 134
2.6
2.00 0.77 127
1.7
2.25 0.77 121
0.9
2.50 0.77 115
0.3
36.39
19.69
8.06
4.07
2.75
2.31
2.10
1.71
1.46
1.28
1.16
1.05
0.98
114
100
86
75
65
60
56
48
40
33
26
19
13
38.47
20.90
8.57
4.33
2.92
2.45
2.23
1.81
1.54
1.35
1.22
1.11
1.03
115
100
87
75
66
60
57
48
41
33
27
20
13
-34.0
-34.0
-28.0
-24.4
-20.9
-19.2
-18.4
-16.5
-14.9
-14.0
-12.8
-11.7
-11.1
0.02 41
0.02 43
0.04 57
0.06 64
0.09 64
0.11 62
0.12 61
0.15 58
0.18 54
0.20 50
0.23 46
0.26 41
0.28 37
-34.0
-34.0
-28.0
-24.4
-20.9
-19.2
-18.4
-16.5
-14.9
-14.0
-12.8
-12.0
-11.1
0.02 41
0.02 43
0.04 57
0.06 64
0.09 64
0.11 62
0.12 61
0.15 58
0.18 54
0.20 50
0.23 46
0.25 41
0.28 37
0.56 -117
0.51 -146
0.50 -168
0.50 -177
0.51 178
0.51 176
0.51 174
0.52 171
0.53 168
0.54 164
0.54 161
0.55 157
0.55 153
0.56 -114
0.50 -144
0.49 -167
0.49 -176
0.49 179
0.50 176
0.50 175
0.51 172
0.51 168
0.52 165
0.53 162
0.54 158
0.54 154
Typical Performance
35
30
MSG
25
35
MSG
30
25 MAG
20 MAG
20
15 15
10
|S21|2
5
MSG
10 |S21|2
5
MSG
00
-5
0.05 0.25 0.75 1.00 1.50 2.00 2.50
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.0V,
Ic = 200 mA.
-5
0.05 0.25 0.75 1.00 1.50 2.00 2.50
FREQUENCY (GHz)
Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.6V,
Ic = 200 mA. 4-47
35
MSG
30
25 MAG
20
15
10 |S21|2
5
MSG
0
0.05 0.25 0.75 1.00 1.50 2.00 2.50
FREQUENCY (GHz)
Figure 11. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 4.8V,
Ic = 200 mA.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT-31625-BLK.PDF ] | |
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| AT-31625-BLK | 4.8 V NPN Common Emitter Medium Power Output Transistor | Agilent(Hewlett-Packard) |
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