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AT-31625-TR1 데이터시트 PDF




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부품번호 AT-31625-TR1 기능
기능 4.8 V NPN Common Emitter Medium Power Output Transistor
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AT-31625-TR1 데이터시트, 핀배열, 회로
4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD3 @ Pout of
21␣ dBm per Tone, 900␣ MHz,
Typ.
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
COLLECTOR
4
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1 2 3 EMITTER
BASE
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-43
5965-5911E




AT-31625-TR1 pdf, 반도체, 판매, 대치품
AT-31625 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 5 mA, Pout␣ =␣ +28.0 dBm
Freq.
Γ source
MHz
Mag.
Ang.
Γ load
Mag.
Ang.
800
825
850
875
900
925
950
975
1000
0.661
0.679
0.697
0.712
0.727
0.740
0.754
0.767
0.777
-149.0
-150.6
-152.4
-154.2
-155.8
-157.5
-159.0
-160.4
-162.1
0.382
0.394
0.403
0.412
0.422
0.426
0.432
0.437
0.438
-171.3
-172.8
-174.6
-176.5
-179.0
179.3
177.2
174.9
172.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0 2 4 6 8 10
Vcb (V)
Figure 8. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad
CPad
B
C
CPad
Die Area = 1.2
CPad = 0.43 pF
E1
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
150
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
1.4E-12
0.4776
0.2508
0.001
0.999
5.06E-12
1.148
0.5965
0.752
0
0.01
2.488
1.288
E2
Packaged Model
Cbc
Lb1 0.2
B
Lb2
Rb2 B
C
Die
E1 E2
Cbe
Lc1
C
Cce
Label Value
Cbc 0.009 pF
Cbe 1.20 pF
Cce 0.48 pF
Lb1 1.53 nH
Lb2 0.045 nH
Rb2 0.1
Le1 0.38 nH
Lc1 0.47 nH
0.2
Le1
E
4-46

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AT-31625-TR1 전자부품, 판매, 대치품
Test Circuit A: Test Circuit Board Layout @ 900 MHz
VBB
VCC
VBB
T1
C3
R2
R1 R3
C2
L1
R4
C5
L2
R5
C6
VCC
C8 C9
9/96
38.1 (1.5)
C1 C4
C7
INPUT
PA3 DEMO
B–MFG0141
76.2 (3.0)
CW Test
VCE = 4.8 V
ICQ = 5.0 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
C10
OUTPUT
C1 100.0 pF
C2 100.0 pF
C3 100.0 nF
C4 6.8 pF
C5 100.0 nF
C6 100.0 pF
C7 2.7 pF
C8 1.5 µF
C9 10.0 µF
C10 100.0 pF
R1 2.2
R2 750.0
R3 2.2
R4 10.0
R5 10.0
T1 MBT 2222A
L1 18.0 µH
L2 18.0 µH
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz
2.2
VBB
750
CW Test
VCE = 4.8 V
ICQ = 5.0 mA
Freq. = 900 MHz
VCC
B DC
C E Transistor
2.2
10
100 nF
10
100 pF
18 µH
80
λ/4 @ 900 MHz
100 pF
80
100 nF
18 µH
λ/4 @ 900 MHz
1.5 µF
10 µF
RF IN
100 pF
6.8 pF
50
= 5.38 (.212)
50
= 19.91 (.784)
100 pF
2.7 pF
RF OUT
4-49

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부품번호상세설명 및 기능제조사
AT-31625-TR1

4.8 V NPN Common Emitter Medium Power Output Transistor

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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