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부품번호 | AT-32063-TR1 기능 |
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기능 | dANPNgWX^ cCE^CvSOT-363pbP[W | ||
제조업체 | Agilent(Hewlett-Packard) | ||
로고 | |||
전체 8 페이지수
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32063
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
1.1␣ dB NF, 14.5␣ dB G A
• Characterized for End-of-
Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic
Package
• Tape-and-Reel Packaging
Option Available [1]
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
1
B1
2
E1
3
C2
6
C1
5
E2
4
B2
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10␣ GHz f t , 30 GHz fmax Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metallization in the fabrication of
these devices.
4-63
5965-8921E
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
S11
S21
S12 S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.98 -11 11.36 3.7
171 -34.77 0.02
83
0.99
-4
0.5
0.86 -50 10.14 3.21 138 -22.02 0.08
59
0.91 -20
0.9
0.72 -82
8.39 2.63 113 -18.97 0.11
43
0.82 -31
1.0
0.69 -88
7.87 2.48 108 -18.61 0.12
41
0.8
-32
1.5
0.58 -119
5.87 1.97
85 -17.8
0.13
31
0.73 -41
1.8
0.52 -134
4.83 1.74
74 -17.72 0.13
28
0.7
-45
2.0
0.49 -145
4.3 1.64
67 -17.69 0.13
28
0.68 -48
2.4
0.45 -165
3.16 1.44
55 -17.68 0.13
30
0.67 -54
3.0
0.41 166
1.84 1.24
39 -16.99 0.14
37
0.64 -63
4.0
0.42 124
0.17 1.02
16 -13.67 0.21
45
0.6
-81
5.0
0.47 93 -1.15 0.88
-2 -9.84 0.32 38
0.54 -107
25
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
GHz
0.9
1.8
2.4
Fmin
dB
0.71
1.37
1.80
GA Gopt
dB
Mag.
Ang.
10.4 0.76
8.3 0.60
7.2 0.50
50
112
155
Rn
—
0.44
0.24
0.10
20
MSG
15
10
MAG
5
S21
0
MSG
-5
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at
VCE=1V, IC = 1mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
S11
S21
S12 S22
GHz
Mag
Ang
dB
Mag Ang
dB
Mag
Ang
Mag
Ang
0.1
0.96 -12 16.46 6.66 169 -37.32 0.014 82
0.98
-5
0.5
0.77 -55 14.73 5.45 132 -25.13 0.055 59
0.87 -21
0.9
0.59 -87 12.37 4.15 107 -22.42 0.076 48
0.76 -29
1.0
0.55 -93 11.74 3.86 103 -22.07 0.079 47
0.74 -30
1.5
0.42 -121
9.26 2.90
83 -20.79 0.091 44
0.69 -36
1.8
0.37 -135
8.01 2.52
73 -20.13 0.099 45
0.67 -39
2.0
0.34 -145
7.35 2.33
67 -19.67 0.104 46
0.66 -41
2.4
0.29 -164
6.05 2.01
56 -18.68 0.116 48
0.65 -46
3.0
0.26 167
4.54 1.69
41 -16.95 0.142 50
0.64 -53
4.0
0.28 124
2.73 1.37
20 -13.75 0.205 48
0.61 -68
5.0
0.33 94 1.36 1.17
1 -10.70 0.292 41
0.57 -89
30
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
Fmin
dB
GA Gopt
dB
Mag.
Ang.
0.9 0.78 14.3 0.65
50
1.8 1.25 10.7 0.45 105
2.4 1.57
9.1 0.35 145
Rn
—
0.31
0.20
0.13
4-66
25
20
MSG
15
MAG
10
MSG
S21
5
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency at
VCE=2.7 V, IC = 2mA.
4페이지 Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.10 (0.004)
0.00 (0.00)
2.20 (0.087)
1.80 (0.071)
0.650 BSC (0.025)
0.30 REF.
0.425 (0.017)
TYP.
0.25 (0.010)
0.15 (0.006)
1.00 (0.039)
0.80 (0.031)
0.20 (0.008)
10° 0.30 (0.012) 0.10 (0.004)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
Part Number
No. of Devices
AT-32063-TR1
3000
AT-32063-BLK
100
Container
7" Reel
antistatic bag
4-69
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
AT-32063-TR1 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
AT-32063-TR1 | dANPNgWX^ cCE^CvSOT-363pbP[W | Agilent(Hewlett-Packard) |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |