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부품번호 | AT-36408 기능 |
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기능 | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | ||
제조업체 | Agilent(Hewlett-Packard) | ||
로고 | |||
4.8 V NPN Common Emitter
Output Power Transistor
for␣ GSM Class IV Phones
Technical Data
AT-36408
Features
• 4.8 Volt Pulsed Operation
(pulse width = 577 µsec,
duty cycle = 12.5%)
• +35.0 dBm Pout @ 900 MHz,
Typ.
• 65% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• Internal Input Pre-Matching
Facilitates Cascading
Applications
• Output Power Device for
GSM Class IV Handsets
SOIC-8 Surface Mount
Plastic Package
Outline P8
Pin Configuration
BASE 1
EMITTER 2
COLLECTOR 3
EMITTER 4
8 BASE
7 EMITTER
6 COLLECTOR
5 EMITTER
Description
Hewlett Packard’s AT-36408
combines internal input pre-
matching with low cost, NPN
power silicon bipolar junction
transistors in a SOIC-8 surface
mount plastic package. This
device is designed for use as the
output device for GSM Class IV
handsets. At 4.8 volts, the device
features +35 dBm pulsed output
power, superior power added
efficiency, and excellent gain,
making the AT-36408 an excellent
choice for battery powered
systems.
The AT-36408 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-81
5965-5960E
AT-36408 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 50 mA, Pulsed Operation, Pout = +35.0 dBm
Freq.
MHz
880
890
900
910
915
920
Γ source
Mag.
Ang.
0.882
0.885
0.887
0.890
0.891
0.893
-170.0
-170.5
-171.1
-171.4
-169.0
-168.4
Γ load
Mag.
Ang.
0.847
0.849
0.851
0.853
0.854
0.855
172.7
172.2
171.6
171.1
168.4
168.2
20
19
18
17
16
15
14
13
12
0 2 4 6 8 10
Vcb (V)
Figure 7. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad
CPad
B
C
CPad
Die Area = 1.2
CPad = 0.3 pF
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
E1
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
0.01
1.27
0.107
E2
Packaged Model
Rlead
B
Cpkg1
Llead
Lwire
Rwire
Lwire
Rwire
Cpkg2
Rlead
E1
Llead
Cpkg1
Cpkg2
Rlead
C
Llead
Cpkg1
Rlead
E2
Cpkg2
Llead
Lwbase
Rwbase
Lwbase
Cbase Rwbase
Lwbase
L=0 Rwbase
R= 1 Ω
Lwbase
Rwbase
Cbase
L=0
R=1 Ω
Die
Lwbb
Rwbb
LE1 LE2
Die
Lwbb LE1
Rwbb
LE2
Die
Lwbb LE1
Rwbb
LE2
Die
LE1 LE2
Label
Rlead
Llead
Rwire
Lwire
Cpkg1
Cpkg2
LE1
Value
0.63 Ω
1.45 nH
1.3 Ω
0.52 nH
0.4 pF
1.2 pF
0.3 nH
Label
LE2
Cbase
Rwbase
Lwbase
Rwbb
Lwbb
Value
0.00064 nH
46.0 pF
0.2 Ω
1.19 nH
0.1 Ω
0.1 nH
4-84
4페이지 Part Number Ordering Information
Part Number
No. of Devices
AT-36408-TR1
1000
AT-36408-BLK
25
Package Dimensions
SOIC-8 Surface Mount Plastic Package
1.27 (.050)
6x
Container
7" Reel
Carrier Tape
3.80/4.00
(.1497/.1574)
5.84/6.20
(.230/.244)
Pin 1
1.35/1.75
(.0532/.0688)
4.72/5.00
(.186/.197)
0.38 ± 0.10
(.015 ± .004) x 45°
0.33/0.51
(.013/.020) 8X
0°/8°
0.10/0.25
(.004/.0098)
0.10 (.004)
Note:
1. Dimensions are shown in millimeters (inches).
0.41/1.27
(.016/.050)
0.19/0.25
(.0075/.0098)
4-87
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
AT-36408 | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent(Hewlett-Packard) |
AT-36408-BLK | 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones | Agilent(Hewlett-Packard) |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |