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부품번호 | AT-38086-BLK 기능 |
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기능 | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | ||
제조업체 | Agilent(Hewlett-Packard) | ||
로고 | |||
4.8 V NPN Silicon Bipolar
Common␣ Emitter Transistor
Technical Data
AT-38086
Features
• 4.8 Volt Pulsed
(pulse width = 577 µsec,
duty cycle = 12.5%)/CW
Operation
• +28 dBm Pulsed Pout
@␣ 900␣ MHz,Typ.
• +23.5 dBm CW Pout
@␣ 836.5␣ MHz,Typ.
• 60% Pulsed Collector
Efficiency @ 900 MHz, Typ.
• 11 dB Pulsed Power Gain
@␣ 900 MHz, Typ.
• -35 dBc IMD3 @ Pout of
17␣ dBm per tone, 900 MHz,
Typ.
Applications
• Driver Amplifier for GSM
and AMPS/ETACS/ 900 MHz
NMT Cellular Phones
• 900 MHz ISM and Special
Mobile Radio
85 mil Plastic Surface
Mount Package
Outline 86
Pin Configuration
4
EMITTER
1
BASE
2
EMITTER
3
COLLECTOR
Description
Hewlett Packard’s AT-38086 is a
low cost, NPN silicon bipolar
junction transistor housed in a
surface mount plastic package.
This device is designed for use as
a pre-driver or driver device in
applications for cellular and
wireless communications
markets. At 4.8 volts, the
AT-38086 features +28 dBm pulsed
output power, Class AB operation,
and +23.5␣ dBm CW. Superior
efficiency and gain makes the
AT-38086 an excellent choice for
battery powered systems.
The AT-38086 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-89
5965-5959E
AT-38086 Typical Performance, TC = 25°C
Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified
28
Γsource = 0.86 ∠ -180
26 Γ load = 0.46 ∠ +128
90
80
24
Pout
22
70
60
20 ηc
18
50
40
16 30
14 20
2 4 6 8 10 12 14 16 17
INPUT POWER (dBm)
Figure 7. Output Power and Collector
Efficiency vs. Input Power.
29
Γsource = 0.86 ∠ -180
27 Γ load = 0.46 ∠ +128
25
23
21
19
3.6 V
17 4.8 V
6.0 V
15
2 4 6 8 10 12 14 16 17
INPUT POWER (dBm)
Figure 8. Output Power vs. Input
Power Over Bias Voltage.
90
Γsource = 0.86 ∠ -180
80 Γ load = 0.46 ∠ +128
70
60
50
40
30
3.6 V
20 4.8 V
6.0 V
10
2 4 6 8 10 12 14 16 17
INPUT POWER (dBm)
Figure 9. Collector Efficiency vs.
Input Power Over Bias Voltage.
28
Γsource = 0.86 ∠ -180
26 Γ load = 0.46 ∠ +128
24
22
20
18
TC = +85°C
16 TC = +25°C
14 TC = –40°C
2 4 6 8 10 12 14 16 17
INPUT POWER (dBm)
Figure 10. Output Power vs. Input
Power Over Temperature.
0
Γsource = 0.86 ∠ -180
-2 Γ load = 0.46 ∠ +128
-4
Output R.L.
-6
-8
-10
Input R.L.
-12
-14
750 800 836.5 850 900 950
FREQUENCY (MHz)
Figure 11. Input and Output Return
Loss vs. Frequency.
0
-5
Γsource = 0.87 ∠ -178
Γ load = 0.48 ∠ +126
-10
-15
-20
-25
-30 IMD3
-35
-40
IMD5
-45
-50
5 7 9 11 13 15 17 19 21 22
OUTPUT POWER/TONE (dBm)
Figure 12. IMD3, IMD5 vs. Output
Power Per Tone.
Note: Test circuit B (AMPS) used and re-tuned at
900 MHz.
4-92
4페이지 Typical Performance
35
30 MSG
35
MSG
30
25
20
15
10 |S21|2
5
0
MAG
25
20 MAG
15
10 |S21|2
5
-5
0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00
0
0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00
FREQUENCY (GHz)
Figure 14. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.6V,
Ic = 50 mA.
FREQUENCY (GHz)
Figure 15. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 4.8V,
Ic = 50 mA.
35
30 MSG
25
20 MAG
15
10 |S21|2
5
0
0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00
FREQUENCY (GHz)
Figure 16. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 6.0V,
Ic = 50 mA.
Part Number Ordering Information
Part Number
No. of Devices
AT-38086-TR1
1000
AT-38086-BLK
100
Container
7" Reel
Antistatic Bag
Package Dimensions
Outline 86
0.51 ± 0.13
(0.020 ± 0.005)
4
45°
1
2
CL
3
2.34 ± 0.38
(0.092 ± 0.015)
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.203 ± 0.051
(0.006 ± 0.002)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
4-95
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
AT-38086-BLK | 4.8 V NPN Silicon Bipolar Common Emitter Transistor | Agilent(Hewlett-Packard) |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |