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부품번호 | AT-41486 기능 |
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기능 | Up to 6 GHz Low Noise Silicon Bipolar Transistor | ||
제조업체 | Agilent(Hewlett-Packard) | ||
로고 | |||
전체 5 페이지수
Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor
Technical Data
AT-41486
Features
• Low Noise Figure:
1.4 dB Typical at 1.0␣ GHz
1.7 dB Typical at 2.0␣ GHz
• High Associated Gain:
18.0 dB Typical at 1.0␣ GHz
13.0 dB Typical at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER
4
BASE
1
COLLECTOR
3
2
EMITTER
4-129
5965-8928E
AT-41486 Typical Scattering Parameters, Common Emitter,
ZO = 50 Ω, TA = 25°C, VCE = 8 V,IC␣ =␣ 10mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
dB Mag.
0.1
.74 -38
28.1 25.46 157
-39.6
.011
0.5
.59 -127
22.0 12.63 107
-30.2
.031
1.0
.56 -168
16.8 6.92 84
-27.7
.041
1.5
.57 169
13.5 4.72 69
-26.2
.049
2.0
.62 152
11.1 3.61 56
-24.8
.058
2.5
.63 142
9.3 2.91 47
-23.4
.068
3.0
.64 130
7.6 2.41 37
-22.2
.078
3.5
.68 122
6.3 2.06 26
-20.6
.093
4.0
.71 113
5.1 1.80 16
-19.5
.106
4.5
.74 105
4.0 1.59 7
-18.0
.125
5.0
.77 99
3.1 1.42 -4
-17.2
.139
5.5
.79 93
2.0
1.27 -13
-16.3
.153
6.0
.81 87
1.1
1.13 -22
-15.4
.170
Ang.
68
47
46
49
43
52
52
51
48
48
43
38
34
S22
Mag. Ang.
.94 -12
.60 -29
.49 -29
.45 -32
.42 -39
.40 -42
.39 -50
.37 -60
.35 -70
.35 -84
.35 -98
.35 -114
.35 -131
AT-41486 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V,IC␣ =␣ 25mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
0.1
.50 -75
32.0 40.01 142
0.5
.55 -158
23.2 14.38 97
1.0
.57 177
17.5 7.50 78
1.5
.57 161
14.1 5.07 65
2.0
.59 148
11.5 3.75 53
2.5 .61 139 9.6 3.02 45
3.0 .65 128 8.0 2.52 34
3.5 .70 121 6.7 2.17 24
4.0 .74 113 5.7 1.92 14
4.5 .78 107 4.7 1.72 3
5.0 .78 102 3.7 1.53 -8
5.5 .78 96 2.7 1.36 -19
6.0 .76 91 1.6 1.21 -29
A model for this device is available in the DEVICE MODELS section.
dB
-41.3
-34.1
-29.9
-27.3
-24.8
-22.9
-21.6
-20.1
-18.8
-17.6
-16.6
-15.4
-14.5
S12
Mag.
.009
.020
.032
.043
.058
.072
.083
.099
.115
.132
.149
.169
.188
Ang.
54
48
61
62
59
58
57
56
52
47
42
36
31
S22
Mag. Ang.
.85 -17
.51 -24
.46 -24
.44 -28
.43 -35
.40 -41
.38 -49
.36 -59
.34 -72
.32 -87
.31 -106
.31 -125
.33 -144
AT-41486 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
0.1 1.3 .12
3
0.5 1.3 .10
16
1.0 1.4 .04
43
2.0 1.7 .12 -145
4.0 3.0 .44 -99
RN/50
0.17
0.17
0.16
0.16
0.40
4-132
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부품번호 | 상세설명 및 기능 | 제조사 |
AT-41485 | Up to 6 GHz Low Noise Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
AT-41486 | Up to 6 GHz Low Noise Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |