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HUF75309T3ST 데이터시트 PDF




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부품번호 HUF75309T3ST 기능
기능 3A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFET
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HUF75309T3ST 데이터시트, 핀배열, 회로
Data Sheet
HUF75309T3ST
December 2001
3A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery operated products.
Formerly developmental type TA75309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75309T3ST SOT-223
5309
NOTE: HUF75309T3ST is available only in tape and reel.
Features
• 3A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.070
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
SOT-223
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75309T3ST Rev. B




HUF75309T3ST pdf, 반도체, 판매, 대치품
HUF75309T3ST
Typical Performance Curves (Continued)
20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
25
20
15
10
5
0
0
VGS = 20V
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
1234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
FIGURE 7. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3A
1.5
10
5
0
0
25oC
150oC
-55oC
1.5 3.0 4.5 6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
7.5
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.5
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
0.8 1.0
0.6 0.9
0.4
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.8
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75309T3ST Rev. B

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HUF75309T3ST 전자부품, 판매, 대치품
HUF75309T3ST
PSPICE Electrical Model
.SUBCKT HUF75309T3ST 2 1 3 ; REV December 97
CA 12 8 5.0e-10
CB 15 14 5.0e-10
CIN 6 8 3.27e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 58.46
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.71e-9
LSOURCE 3 7 5.6e-10
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5e-3
RGATE 9 20 2.2
RLDRAIN 2 5 10
RLGATE 1 9 27.1
RLSOURCE 3 7 5.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.8e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*50),3))}
.MODEL DBODYMOD D (IS = 3.4e-13 RS = 2.3e-2 TRS1 = 2.2e-3 TRS2 = 1.03e-6 CJO = 6.55e-10 TT = 3.6e-8 M = 0.57)
.MODEL DBREAKMOD D (RS = 2.8e- 1TRS1 = 1e- 4TRS2 = 2.25e-5)
.MODEL DPLCAPMOD D (CJO = 4e-1 0IS = 1e-3 0N = 10 M = 0.75)
.MODEL MMEDMOD NMOS (VTO = 3.35 KP = 3 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.2)
.MODEL MSTROMOD NMOS (VTO = 3.65 KP = 16 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.97 KP = 0.125 LAMBDA = 1e-3 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.07e- 3TC2 = -5.2e-7)
.MODEL RDRAINMOD RES (TC1 = 5.25e-2 TC2 = 1.08e-4)
.MODEL RSLCMOD RES (TC1 = 3.3e-3 TC2 = 1.03e-7)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -3.15e-3 TC2 = -9.41e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.61e- 3TC2 = 1.37e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.25 VOFF= -4.25)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.25 VOFF= -7.25)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUF75309T3ST Rev. B

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