|
|
PDF HUF75329S3S Data sheet ( Hoja de datos )
| Número de pieza | HUF75329S3S | |
| Descripción | 49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HUF75329S3S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
January 2000 File Number 4361.7
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER©
Models
- Available on the web at: www.Intersil.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.
1 page  
HUF75329G3, HUF75329P3, HUF75329S3S
Typical Performance Curves (Continued)
2.5
80µs PULSE TEST
VGS = 10V, ID = 49A
2.0
1.2
1.0
VGS = VDS, ID = 250µA
1.5 0.8
1.0 0.6
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
1800
1500
1200
900
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
300
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4 WAVEFORMS IN
DESCENDING ORDER:
ID = 49A
2 ID = 36.75A
VDD = 30V
ID = 24.5A
ID = 12.25A
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HUF75329S3S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF75329S3S | 49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs |  Fairchild Semiconductor |
| HUF75329S3S | 49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs | Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |