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HUF75639S3 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 HUF75639S3은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 HUF75639S3 기능
기능 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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HUF75639S3 데이터시트, 핀배열, 회로
HUF75639G3, HUF75639P3, HUF75639S3S,
HUF75639S3
Data Sheet
December 2001
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75639G3
TO-247
75639G
HUF75639P3
TO-220AB
75639P
HUF75639S3S
TO-263AB
75639S
HUF75639S3
TO-262AA
75639S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(TAB)
TO-262AA
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B




HUF75639S3 pdf, 반도체, 판매, 대치품
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Typical Performance Curves (Continued)
1000
100 VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100
101
1000
TJ
TC
=
=
MAX RATED
25oC
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 100V
1ms
10ms
1
1 10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.001
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
1
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
VGS = 6V
80
VGS = 20V
VGS = 10V
60 VGS = 7V
40
20
0
0
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1234567
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80 VDD = 15V
60
175oC
40
20
0
0
25oC
-55oC
1.5 3.0 4.5 6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
7.5
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

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HUF75639S3 전자부품, 판매, 대치품
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
PSPICE Electrical Model
SUBCKT HUF75639 2 1 3 ;
CA 12 8 2.8e-9
CB 15 14 2.65e-9
CIN 6 8 1.9e-9
rev Oct. 98
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 110
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 2e-9
LGATE 1 9 1e-9
LSOURCE 3 7 0.47e-9
RLGATE 1 9 10
RLDRAIN 2 5 20
RLSOURCE 3 7 4.69
GATE
1
LGATE
RLGATE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.3e-2
RGATE 9 20 0.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 13
8
S2A
14
13
15
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*115),4))}
.MODEL DBODYMOD D (IS = 1.4e-12 RS = 3.3e-3 XTI = 4.7 TRS1 = 2e-3 TRS2 = 0.1e-5 CJO = 3.3e-9 TT = 6.1e-8 M = 0.7)
.MODEL DBREAKMOD D (RS = 3.5e- 1TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 2.2e- 9IS = 1e-3 0N = 10 M = 0.95 vj = 1.0)
.MODEL MMEDMOD NMOS (VTO = 3.5 KP = 4.8 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u Rg = 0.7)
.MODEL MSTROMOD NMOS (VTO = 3.97 KP = 56.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO =3.11 KP = 0.085 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 0.8e- 3TC2 = 1e-6)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 1.75e-5)
.MODEL RSLCMOD RES (TC1 = 2.8e-3 TC2 = 14e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -2.0e-3 TC2 = -1.75e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e- 3TC2 = 0.05e-9)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.0 VOFF = -3.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.5 VOFF = -6.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF = 4.95)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.95 VOFF = -2.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

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