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HUF75823D3 데이터시트 PDF




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PDF 형식의 HUF75823D3 자료 제공

부품번호 HUF75823D3 기능
기능 14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


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HUF75823D3 데이터시트, 핀배열, 회로
TM
Data Sheet
14A, 150V, 0.150 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75823D3
GATE
SOURCE
HUF75823D3S
Symbol
D
G
S
HUF75823D3, HUF75823D3S
April 2000
File Number 4847
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.150Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75823D3
TO-251AA
75823D
HUF75823D3S
TO-252AA
75823D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75823D3ST.
Absolute Maximum Ratings TC = 25oC, Unless
Otherwise Specified
HUF75823D3, HUF75823D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
2150o0CoC, V, VGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
150
±20
14
10
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
85
0.57
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000




HUF75823D3 pdf, 반도체, 판매, 대치품
HUF75823D3, HUF75823D3S
Typical Performance Curves (Continued)
100 SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10 100µs
1
0.5
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
80
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0.5
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
28
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
24 VDD = 15V
20
16
12
TJ = 175oC
TJ = -55oC
8
4
TJ = 25oC
0
2345
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
6
28
24
VGS = 10V
VGS = 6V
20
VGS = 5V
16
12
8
PULSE DURATION = 80µs
4 DUTY CYCLE = 0.5% MAX
TC = 25oC
00 1 2 3 4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
2.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
-80
VGS = 10V, ID = 14A
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4

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HUF75823D3 전자부품, 판매, 대치품
HUF75823D3, HUF75823D3S
PSPICE Electrical Model
.SUBCKT HUF75823 2 1 3 ; rev 18 February 2000
CA 12 8 1.2e-9
CB 15 14 1.3e-9
CIN 6 8 7.4e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 157.1
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 3.11e-9
LSOURCE 3 7 3.72e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 7.7e-2
RGATE 9 20 2.13
RLDRAIN 2 5 10
RLGATE 1 9 31.1
RLSOURCE 3 7 37.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.0e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*25),3))}
.MODEL DBODYMOD D (IS = 6.5e-13 RS = 1.06e-2 XTI = 5 TRS1 = 2.4e-3 TRS2 = 1.5e-6 CJO = 8.0e-10 TT = 1.1e-7 M = 0.6)
.MODEL DBREAKMOD D (RS = 2.0 TRS1 = 2.0e-3 TRS2 = 1.0e-6)
.MODEL DPLCAPMOD D (CJO = 8.9e-10 IS = 1e-30 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 3.36 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.13)
.MODEL MSTROMOD NMOS (VTO = 3.84 KP = 63 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.89 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 21.3 )
.MODEL RBREAKMOD RES (TC1 = 1.08e-3 TC2 = -6.0e-7)
.MODEL RDRAINMOD RES (TC1 = 1.1e-2 TC2 = 2.7e-5)
.MODEL RSLCMOD RES (TC1 = 3.5e-3 TC2 = 2.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -9.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.1e-3 TC2 = -9.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.8 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -5.8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.8 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
HUF75823D3

14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUF75823D3

14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET

Intersil Corporation
Intersil Corporation

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