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PDF HUF75831SK8 Data sheet ( Hoja de datos )
| Número de pieza | HUF75831SK8 | |
| Descripción | 3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF75939P3, HUF75939S3ST
December 2001
22A, 200V, 0.125 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
HUF75939P3
HUF75939S3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
• rDS(ON) = 0.125Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
• www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75939P3
TO-220AB
75939P
HUF75939S3ST
TO-263AB
75939S
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75939P3, HUF75939S3ST UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
200
200
±20
22
16
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
180
1.2
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
1 page  
HUF75939P3, HUF75939S3ST
Typical Performance Curves (Continued)
1.3
ID = 250µA
1.2
1.1
10000
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
1.0
0.9
0.8
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 100V
8
COSS ≅ CDS + CGD
100
CRSS = CGD
10
0.1
1 10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 22A
ID = 5A
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF75831SK8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF75831SK8 | 3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET |  Fairchild Semiconductor |
| HUF75831SK8 | 3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET | Intersil Corporation |
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