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PDF HUF76107P3 Data sheet ( Hoja de datos )
| Número de pieza | HUF76107P3 | |
| Descripción | 20A/ 30V/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76107P3
October 1999 File Number 4382.5
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
HUF76107P3
TO-220AB
BRAND
76107P
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
70 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.
1 page  
HUF76107P3
Typical Performance Curves Unless otherwise specified (Continued)
30 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25
20
-40oC
150oC
25oC
15
10
5
VDD = 15V
0
0123456
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
30
VGS = 10V
25
20
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 4.5V
15
10
5
0
0
VGS = 4V
VGS = 3.5V
VGS = 3V
12345
VDS, DRAIN TO SOURCE VOLTAGE (V)
6
FIGURE 8. SATURATION CHARACTERISTICS
90
ID = 20A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
70 ID = 12A
60 ID = 5A
50
40
30
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.00
1.75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 20A
1.50
1.25
1.00
0.75
0.50
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
74
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76107P3.PDF ] | |
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