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PDF HUF76113SK8 Data sheet ( Hoja de datos )
| Número de pieza | HUF76113SK8 | |
| Descripción | 6.5A/ 30V/ 0.030 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUF76113SK8
January 2003
6.5A, 30V, 0.030 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113SK8
MS-012AA
76113SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113SK8T.
Features
• Logic Level Gate Drive
• 6.5A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC(1)
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
GATE(4)
DRAIN(6)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2003 Fairchild Semiconductor Corporation
HUF76113SK8 Rev. B1
1 page  
HUF76113SK8
Typical Performance Curves (Continued)
30
VDD = 15V
PULSE DURATION = 80µs
25 DUTY CYCLE = 0.5% MAX
20
-55oC
25oC
150oC
15
10
5
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
150
ID = 0.5A
ID = 6.5A
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
100
ID = 2A
30 VGS = 10V PULSE DURATION = 80µs
25
VGS = 5V
VGS = 4.5V
DUTY CYCLE = 0.5% MAX
TC = 25oC
20
VGS = 4V
VGS = 3.5V
15
10 VGS = 3V
5
0
012 3
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
4
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 6.5A
1.5
50 1.0
0
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.9
0.8
0.7
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
0.5
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
HUF76113SK8 Rev. B1
5 Page 
HUF76113SK8
SPICE Thermal Model (0.76 in2 footprint)
REV 3 June 1998
HUF76113SK8
CTHERM1 th 6 3.75e-4
CTHERM2 6 5 3.05e-3
CTHERM3 5 4 3.70e-2
CTHERM4 4 3 2.52e-2
CTHERM5 3 2 8.50e-2
CTHERM6 2 tl 7.95e-1
RTHERM1 th 6 3.95e-2
RTHERM2 6 5 2.50e-1
RTHERM3 5 4 4.00e-1
RTHERM4 4 3 6.35
RTHERM5 3 2 2.02e1
RTHERM6 2 tl 4.80e1
SABER Thermal Model (0.76 in2 footprint)
SABER thermal model HUF76113SK8
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 3.75e-4
ctherm.ctherm2 6 5 = 3.05e-3
ctherm.ctherm3 5 4 = 3.70e-2
ctherm.ctherm4 4 3 = 2.52e-2
ctherm.ctherm5 3 2 = 8.50e-2
ctherm.ctherm6 2 tl = 7.95e-1
rtherm.rtherm1 th 6 = 3.95e-2
rtherm.rtherm2 6 5 = 2.50e-1
rtherm.rtherm3 5 4 = 4.00e-1
rtherm.rtherm4 4 3 = 6.35
rtherm.rtherm5 3 2 = 2.02e1
rtherm.rtherm6 2 tl = 4.80e1
}
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
th JUNCTION
CTHERM1
6
CTHERM2
5
CTHERM3
4
CTHERM4
3
CTHERM5
2
CTHERM6
tl CASE
©2003 Fairchild Semiconductor Corporation
HUF76113SK8 Rev. B1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HUF76113SK8.PDF ] | |
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