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PDF HUF76121D3 Data sheet ( Hoja de datos )
| Número de pieza | HUF76121D3 | |
| Descripción | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HUF76121D3, HUF76121D3S
October 1999 File Number 4391.5
20A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76121D3
TO-251AA
76121D
HUF76121D3S
TO-252AA
76121D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76121D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.023Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.
1 page  
HUF76121D3, HUF76121D3S
Typical Performance Curves (Continued)
75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60
-55oC
25oC
45
175oC
30
15
0
0
VDD = 15V
1234
VGS, GATE TO SOURCE VOLTAGE (V)
5
FIGURE 7. TRANSFER CHARACTERISTICS
35
ID = 20A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
ID = 10A
25
ID = 1A
20
15
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 9. SOURCE TO DRAIN ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
VGS = VDS, ID = 250µA
1.0
75
VGS = 4.5V
60
VGS = 4V
45
30 VGS = 3.5V
15
0
0
VGS = 3V
PULSEVGDSUR= A1T0IVON = 80µs
DUTY VCGYSC=LE5V= 0.5% MAX
1234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
FIGURE 8. SATURATION CHARACTERISTICS
1.6
PULSE DURATION = 250µs, VGS = 10V, ID = 20A
1.4
1.2
1.0
0.8
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
0.8 1.0
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5
1.0
-80
-40 0 40 80 0.12k
TJ, JUNCTION TEMPERATURE (oC)
0.16k
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF76121D3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HUF76121D3 | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs |  Fairchild Semiconductor |
| HUF76121D3 | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Intersil Corporation |
| HUF76121D3S | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Fairchild Semiconductor |
| HUF76121D3S | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Intersil Corporation |
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