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부품번호 | HUF76121D3S 기능 |
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기능 | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 11 페이지수
Data Sheet
HUF76121D3, HUF76121D3S
January 2003
20A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76121D3
TO-251AA
76121D
HUF76121D3S
TO-252AA
76121D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76121D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.023Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76121D3, HUF76121D3S Rev. B1
HUF76121D3, HUF76121D3S
Typical Performance Curves (Continued)
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
0.01
10-5
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
VGS = 10V
100
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
500
TJ
TC
=
=
MAX RATED
25oC
100
100µs
10 1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
BVDSS MAX = 30V
1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
100 If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10 STARTING TJ = 150oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
©2003 Fairchild Semiconductor Corporation
HUF76121D3, HUF76121D3S Rev. B1
4페이지 HUF76121D3, HUF76121D3S
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
IgREF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
©2003 Fairchild Semiconductor Corporation
HUF76121D3, HUF76121D3S Rev. B1
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
HUF76121D3 | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Fairchild Semiconductor |
HUF76121D3 | 20A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | Intersil Corporation |
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