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부품번호 HUFA75321D3S 기능
기능 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
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HUFA75321D3S 데이터시트, 핀배열, 회로
Data Sheet
HUFA75321D3, HUFA75321D3S
December 2001
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75321D3
TO-251AA
75321D
HUFA75321D3S
TO-252AA
75321D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUFA75321D3ST.
Packaging
JEDEC TO-251AA
Features
• 20A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B




HUFA75321D3S pdf, 반도체, 판매, 대치품
HUFA75321D3, HUFA75321D3S
Typical Performance Curves (Continued)
500
100 VGS = 20V
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
300
100
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
TJ = MAX RATED
TC = 25oC
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
100 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 55V
1ms
10ms
1
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
75 VGS = 20V
VGS = 10V
VGS = 8V
60 VGS = 7V
VGS = 6V
45
30
VGS = 5V
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0 1.5 3.0 4.5 6.0 7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60
45
-55oC
175oC
30
15
25oC
VDD = 15V
0
0 1.5 3.0 4.5 6.0 7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B

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HUFA75321D3S 전자부품, 판매, 대치품
HUFA75321D3, HUFA75321D3S
PSPICE Electrical Model
.SUBCKT HUFA75321D 2 1 3 ; rev 4/29/98
CA 12 8 9.96e-10
CB 15 14 9.83e-10
CIN 6 8 6.18e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 59.54
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 3.57e-9
LSOURCE 3 7 4.25e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.50e-3
RGATE 9 20 2.25
RLDRAIN 2 5 10
RLGATE 1 9 35.7
RLSOURCE 3 7 42.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 16.30e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*101),2.5))}
.MODEL DBODYMOD D (IS = 7.47e-13 RS = 6.45e-3 TRS1 = 2.01e-3 TRS2 = 1.21e-6 CJO = 1.02e-9 TT = 3.21e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 2.01e- 1TRS1 = 3.62e- 3TRS2 = 6.01e-7)
.MODEL DPLCAPMOD D (CJO = 9.0e-1 0IS = 1e-3 0N = 10 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 3.25 KP = 1.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.25)
.MODEL MSTROMOD NMOS (VTO = 3.65 KP = 32.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.91 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = 1.21e-7)
.MODEL RDRAINMOD RES (TC1 = 2.40e-2 TC2 = 1.02e-6)
.MODEL RSLCMOD RES (TC1 = 2.07e-4 TC2 = 4.67e-5)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 =0)
.MODEL RVTHRESMOD RES (TC = -3.01e-3 TC2 = -8.85e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.96e- 3TC2 = 1.39e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.85 VOFF= -4.85)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.85 VOFF= -7.85)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 3.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.00 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B

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관련 데이터시트

부품번호상세설명 및 기능제조사
HUFA75321D3

20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor
HUFA75321D3S

20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor

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