PDF HUFA75321P3 Data sheet ( Hoja de datos )

Número de pieza	HUFA75321P3
Descripción	35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Data Sheet HUFA75321P3, HUFA75321S3S December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321. Ordering Information PART NUMBER PACKAGE BRAND HUFA75321P3 TO-220AB 75321P HUFA75321S3S TO-263AB 75321S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75321S3ST. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Features • 35A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUFA75321P3, HUFA75321S3S Rev. B 1 page HUFA75321P3, HUFA75321S3S Typical Performance Curves (Continued) 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 35A 2.0 1.5 1.0 1.2 1.0 0.8 VGS = VDS, ID = 250µA 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1.2 ID = 250µA 1.1 1000 800 600 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1.0 0.9-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 10 400 200 0 0 COSS CRSS 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 8 6 4 WAVEFORMS IN DESCENDING ORDER: 2 ID = 35A VDD = 30V ID = 17.5A ID = 8.75A 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT ©2001 Fairchild Semiconductor Corporation HUFA75321P3, HUFA75321S3S Rev. B 5 Page

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