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Datasheet HUFA75339G3-PDF.HTML Equivalent ( PDF )

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HUF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1HUF75229P344A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET

HUF75229P3 Data Sheet December 2001 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2HUF75229P344A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET

HUF75229P3 Data Sheet June 1998 File Number 4536.1 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou
Intersil Corporation
Intersil Corporation
mosfet
3HUF75307D315A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
4HUF75307D315A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 File Number 4353.6 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per
Intersil Corporation
Intersil Corporation
mosfet
5HUF75307D3S15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
6HUF75307D3S15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 File Number 4353.6 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per
Intersil Corporation
Intersil Corporation
mosfet
7HUF75307P315A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
Fairchild Semiconductor
Fairchild Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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