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부품번호 HUFA75332S3S 기능
기능 60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs
제조업체 Fairchild Semiconductor
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HUFA75332S3S 데이터시트, 핀배열, 회로
HUFA75339G3, HUFA75339P3, HUFA75339S3S
Data Sheet
December 2001
75A, 55V, 0.012 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75339.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75339G3
TO-247
75339G
HUFA75339P3
TO-220AB
75339P
HUFA75339S3S
TO-263AB
75339S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75339S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B




HUFA75332S3S pdf, 반도체, 판매, 대치품
HUFA75339G3, HUFA75339P3, HUFA75339S3S
Typical Performance Curves (Continued)
1000
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
FIGURE 4. PEAK CURRENT CAPABILITY
100
101
500
TJ = MAX RATED
TC = 25oC
100
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 55V
1
1 10
10ms
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150
VGS = 20V
VGS = 10V
120 VGS = 7V
VGS = 6V
90
60
VGS = 5V
30
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 7. SATURATION CHARACTERISTICS
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 15V
90
175oC
60
30 25oC
-55oC
0
0 1.5 3.0 4.5 6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
7.5
©2001 Fairchild Semiconductor Corporation
HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B

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HUFA75332S3S 전자부품, 판매, 대치품
HUFA75339G3, HUFA75339P3, HUFA75339S3S
PSPICE Electrical Model
.SUBCKT HUFA75339 2 1 3 ; rev 23 February 1999
CA 12 8 2.80e-9
CB 15 14 2.80e-9
CIN 6 8 1.77e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 59.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
GATE
1
LDRAIN 2 5 1.0e-9
LGATE 1 9 2.0e-9
LSOURCE 3 7 4.7e-10
K1 LSOURCE LGATE 0.0302
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.95e-3
RGATE 9 20 0.34
RLDRAIN 2 5 10
RLGATE 1 9 20
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DPLCAP
10
RSLC2
5
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
LGATE
RLGATE
-
ESG
6
8
+
EVTEMP
RGATE + 18 -
9 20 22
6
EVTHRES
+ 19 -
8
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*230),4))}
.MODEL DBODYMOD D (IS = 3.5e-12 RS = 3.02e-3 N = 1.02 XTI = 5.5 TRS1 = 3.0e-3 TRS2 = 4.0e-6 CJO = 2.9e-9 TT = 4.35e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 8.5e-2 TRS1 = 8.0e- 4TRS2 = 1.0e-7)
.MODEL DPLCAPMOD D (CJO = 2.25e- 9IS = 1e-30 M = 0.8 )
.MODEL MMEDMOD NMOS (VTO = 3.1 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=0.34)
.MODEL MSTROMOD NMOS (VTO = 3.73 KP = 86.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.7 KP = 0.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=3.4)
.MODEL RBREAKMOD RES (TC1 = 1.08e- 3TC2 = -2.5e-7)
.MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5)
.MODEL RSLCMOD RES (TC1 = 6.0e-3 TC2 = -2.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 5.5e-4 TC2 = 1.75e-5)
.MODEL RVTHRESMOD RES (TC1 = -3.65e-3 TC2 = -6.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.3e- 3TC2 = -4.0e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9 VOFF= -5.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.1 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B

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HUFA75332S3S

60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor
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