HUFA75433S3S Datasheet PDF - Fairchild Semiconductor
| Part Number | HUFA75433S3S | |
| Description | N-Channel UltraFET MOSFETs 60V/ 64A/ 16m | |
| Manufacturers | Fairchild Semiconductor | |
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March 2002
HUFA75433S3S
N-Channel UltraFET® MOSFETs
60V, 64A, 16mΩ
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET® process. This advanced pro-
cess technology achieves very low on-resistance per
silicon area, resulting in outstanding performance. This de-
vice is capable of withstanding high energy in the ava-
lanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers,
relay drivers, low-voltage bus switches, and power man-
agement in portable and battery-operated products.
Applications
• Motor and Load Control
• Powertrain Management
Features
• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.016Ω, VGS = 10V
DD
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 125oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
60
±20
64
5
Figure 4
250
150
1
-55 to 175
Units
V
V
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
1
62
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
Rev. A
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Typical Characteristics TC = 25°C unless otherwise noted
1.2
ID = 250µA
4000
1.1
1000
CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VDD = 30V
8
100
60
0.1
VGS = 0V, f = 1MHz
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 12. Capacitance vs Drain to Source
Voltage
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 64A
ID = 40A
10 20 30 40
Qg, GATE CHARGE (nC)
50
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 14. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. A
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| Information | Total 11 Pages | |
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