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부품번호 HUFA75631SK8 기능
기능 5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET
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HUFA75631SK8 데이터시트, 핀배열, 회로
Data Sheet
HUFA75631SK8
December 2001
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
Symbol
1
2
3
4
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
5
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.039Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75631SK8
MS-012AA
75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75631SK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUFA75631SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TA
(TA
=
=
12050oCoC, ,VVGGSS==1100VV) )(F(Figiugruere22) ).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
5.5
3.5
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds
4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B




HUFA75631SK8 pdf, 반도체, 판매, 대치품
HUFA75631SK8
Typical Performance Curves (Continued)
200
100 RθJA = 50oC/W
100µs
10
OPERATION IN THIS
1 AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
0.1 TA = 25oC
1ms
10ms
1 10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1
1
10 100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
40
30
20
10
0
2
TJ = 150oC
TJ = 25oC
TJ = -55oC
34
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
6
1.5
1.0
0.5
-80
VGS = 10V, ID = 5.5A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
50
VGS = 20V
VGS = 10V
40
30
VGS = 7V
VGS = 6V
VGS =5V
20
10
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
1 23
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 8. SATURATION CHARACTERISTICS
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B

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HUFA75631SK8 전자부품, 판매, 대치품
HUFA75631SK8
junction temperature or power dissipation. Pulse applications
can be evaluated using the Fairchild device Spice thermal
model or manually utilizing the normalized maximum
transient thermal impedance curve.
Displayed on the curve are RθJA values listed in the Electrical
Specifications table. The points were chosen to depict the
compromise between the copper board area, the thermal
resistance and ultimately the power dissipation, PDM.
Thermal resistances corresponding to other copper areas can
be obtained from Figure 23 or by calculation using Equation 2.
RθJA is defined as the natural log of the area times a coefficient
added to a constant. The area, in square inches is the top
copper area including the gate and source pads.
RθJA = 83.2 23.6 × ln (Area)
(EQ. 2)
The transient thermal impedance (ZθJA) is also effected by
varied top copper board area. Figure 21 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
240
lnRθJA = 83.2 - 23.6* (AREA)
200 189oC/W - 0.0115in2
160 152oC/W - 0.054in2
120
80
0.01
0.1
AREA, TOP COPPER AREA (in2)
1.0
FIGURE 20. THERMAL RESISTANCE vs MOUNTING PAD AREA
150
COPPER BOARD AREA - DESCENDING ORDER
0.04 in2
120 0.28 in2
0.52 in2
0.76 in2
90 1.00 in2
60
30
0
10-1
100 101 102
t, RECTANGULAR PULSE DURATION (s)
FIGURE 21. THERMAL IMPEDANCE vs MOUNTING PAD AREA
103
©2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B

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부품번호상세설명 및 기능제조사
HUFA75631SK8

5.5A/ 100V/ 0.039 Ohm/ N-Channel/ UltraFET Power MOSFET

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