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부품번호 HUFA75637P3 기능
기능 44A/ 100V/ 0.030 Ohm/ N-Channel/ UltraFET Power MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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HUFA75637P3 데이터시트, 핀배열, 회로
Data Sheet
HUFA75637P3, HUFA75637S3S
December 2001
44A, 100V, 0.030 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75637P3
GATE
SOURCE
HUFA75637S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75637P3
TO-220AB
75637P
HUFA75637S3S
TO-263AB
75637S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75637S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75637P3, HUFA75637S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, ,VVGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
44
31
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
155
1.03
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75637P3, HUFA75637S3S Rev. B




HUFA75637P3 pdf, 반도체, 판매, 대치품
HUFA75637P3, HUFA75637S3S
Typical Performance Curves (Continued)
300
SINGLE PULSE
TJ = MAX RATED
100 TC = 25oC
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
1
1 10 100 300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.001
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
1
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
40
20
0
2
TJ = 175oC
TJ = -55oC
TJ = 25oC
3 45
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
6
80
VGS = 20V
VGS = 10V
60
40
VGS = 7V
VGS = 6V
VGS =5V
20
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 44A
2.0
1.5
1.0
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA75637P3, HUFA75637S3S Rev. B

4페이지










HUFA75637P3 전자부품, 판매, 대치품
HUFA75637P3, HUFA75637S3S
PSPICE Electrical Model
.SUBCKT HUFA75637 2 1 3 ; rev 23 June 1999
CA 12 8 2.70e-9
CB 15 14 2.70e-9
CIN 6 8 1.56e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 113.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 6.5e-9
LSOURCE 3 7 2.3e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.68e-2
RGATE 9 20 0.86
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.65e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
LGATE
RLGATE
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 13
8
S2A
14
13
15
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3.5))}
.MODEL DBODYMOD D (IS = 1.30e-12 IKF = 19 RS = 2.86e-3 XTI = 5 TRS1 = 2.25e-3 TRS2 = 1.00e-6 CJO = 1.90e-9 TT = 6.5e-8 M = 0.55)
.MODEL DBREAKMOD D (RS = 3.05e- 1IKF = 1 TRS1 = 8e- 4TRS2 = 3e-6)
.MODEL DPLCAPMOD D (CJO = 2.20e- 9IS = 1e-3 0M = 0.83)
.MODEL MMEDMOD NMOS (VTO = 3.21 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.86)
.MODEL MSTROMOD NMOS (VTO = 3.58 KP = 37.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.81 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.60 )
.MODEL RBREAKMOD RES (TC1 =1.08e- 3TC2 = -8.6e-7)
.MODEL RDRAINMOD RES (TC1 = 7.70e-3 TC2 = 2.20e-5)
.MODEL RSLCMOD RES (TC1 = 4.25e-3 TC2 = 1.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.07e-3 TC2 = -6.65e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.20e- 3TC2 =9.67e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.8 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUFA75637P3, HUFA75637S3S Rev. B

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관련 데이터시트

부품번호상세설명 및 기능제조사
HUFA75637P3

44A/ 100V/ 0.030 Ohm/ N-Channel/ UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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