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부품번호 HUFA76619D3S 기능
기능 18A/ 100V/ 0.087 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
제조업체 Fairchild Semiconductor
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HUFA76619D3S 데이터시트, 핀배열, 회로
Data Sheet
HUFA76619D3, HUFA76619D3S
January 2002
18A, 100V, 0.087 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUFA76619D3
DRAIN
(FLANGE)
GATE
SOURCE
HUFA76619D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.085Ω, VGS = 10V
- rDS(ON) = 0.087Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76619D3
TO-251AA
76619D
HUFA76619D3S
TO-252AA
76619D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA76619D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76619D3, HUFA76619D3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
1220550ooCCoC,, ,VVVGGGSSS===1505VVV) ))
.........
(Figure 2)
........
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ID
ID
ID
Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
18
18
12
12
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
75
0.5
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUFA76619D3, HUFA76619D3S Rev. B




HUFA76619D3S pdf, 반도체, 판매, 대치품
HUFA76619D3, HUFA76619D3S
Typical Performance Curves (Continued)
500
100
100µs
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED TC = 25oC
1ms
10ms
.1
1
10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
100 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10 STARTING TJ = 150oC
1
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
10 TJ = 25oC
TJ = 175oC
5
TJ = -55oC
0
234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
30
VGS = 10V
24 VGS = 5V
VGS = 4V
18 VGS = 3.5V
PULSE DURATION = 80µs
12 DUTY CYCLE = 0.5% MAX
VGS = 3V
6
Tc = 25oC
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
FIGURE 8. SATURATION CHARACTERISTICS
110
100
90
80
ID = 6A
70
ID = 12A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
ID = 18A
60
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 18A
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76619D3, HUFA76619D3S Rev. B

4페이지










HUFA76619D3S 전자부품, 판매, 대치품
HUFA76619D3, HUFA76619D3S
PSPICE Electrical Model
.SUBCKT HUFA76619 2 1 3 ; rev 28August 1999
CA 12 8 1.3e-9
CB 15 14 1.4e-9
CIN 6 8 7.5e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 117.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.73e-10
LSOURCE 3 7 6.12e-10
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.95e-2
RGATE 9 20 2.95
RLDRAIN 2 5 10
RLGATE 1 9 1.7
RLSOURCE 3 7 6.1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 23e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
EBREAK
+
17
18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*35),3.7))}
.MODEL DBODYMOD D (IS = 5.9e-13 RS = 1.3e-2 TRS1 = 1e-5 TRS2 = 0 CJO = 9.0e-10 TT = 1e-7 M = 0.65)
.MODEL DBREAKMOD D (RS = 5.8e- 1TRS1 = 1e- 3TRS2 = 2e-5)
.MODEL DPLCAPMOD D (CJO = 9e-1 0IS = 1e-3 0N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 1.85KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.95)
.MODEL MSTROMOD NMOS (VTO = 2.22 KP = 50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.60 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 29.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = -5e-7)
.MODEL RDRAINMOD RES (TC1 = 11.5e-3 TC2 = 2.6e-5)
.MODEL RSLCMOD RES (TC1 = 3e-3TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -6.5e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.5e- 3TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -2.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= -4.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
HUFA76619D3, HUFA76619D3S Rev. B

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관련 데이터시트

부품번호상세설명 및 기능제조사
HUFA76619D3

18A/ 100V/ 0.087 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
HUFA76619D3S

18A/ 100V/ 0.087 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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