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HS-2510RH 데이터시트 PDF




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부품번호 HS-2510RH 기능
기능 Radiation Hardened High Slew Rate Operational Amplifier
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HS-2510RH 데이터시트, 핀배열, 회로
Data Sheet
HS-2510RH
August 1999 File Number 3592.2
Radiation Hardened High Slew Rate
Operational Amplifier
The HS-2510RH is a radiation hardened high performance
operational amplifier which set the standard for maximum
slew rate and wide bandwidth operation in moderately
powered, internally compensated, monolithic devices. In
addition to excellent dynamic characteristics, this
dielectrically isolated amplifier also offers low offset current
and high input impedance.
The ±50V/ms minimum slew rate and fast settling time of the
HS-2510RH are ideally suited for high speed D/A, A/D, and
pulse amplification designs. The HS-2510RH superior
bandwidth and 750kHz minimum full power bandwidth are
extremely useful in RF and video applications. To insure
compliance with slew rate and transient response
specifications, all devices are 100% tested for AC
performance characteristics over full temperature limits. To
improve signal conditioning accuracy, the HS-2510RH
provides a maximum offset current of 25nA and a minimum
input impedance of 50M, both at 25oC, as well as offset
voltage trim capability.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95686. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinouts
HS-2510RH GDIP1-T8 (CERDIP)
OR
HS-2510RH CDIP2-T8 (SBDIP)
TOP VIEW
BAL 1
IN- 2
IN+ 3
V- 4
-
+
8 COMP
7 V+
6 OUT
5 BAL
Features
• Electrically Screened to SMD # 5962-95686
• QML Qualified per MIL-PRF-38535 Requirements
• High Slew Rate. . . . . . . . . . . . 50V/µs (Min), 65V/µs (Typ)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 750kHz (Min)
• Low Offset Current . . . . . . . . . . . . 25nA (Min), 10nA (Typ)
• High Input Impedance . . . . . . . 50M(Min), 100M(Typ)
• Wide Small Signal Bandwidth . . . . . . . . . . . .12MHz (Typ)
• Fast Settling Time (0.1% of 10V Step) . . . . . . 250ns (Typ)
• Low Quiescent Supply Current. . . . . . . . . . . . . 6mA (Max)
• Internally Compensated For Unity Gain Stability
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962D9568601VPA
HS7-2510RH-Q
5962D9568601VPC
HS7B-2510RH-Q
5962D9568601VXC
HS9-2510RH-Q
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
-55 to 125
HS-2510RH
CDFP3-F14 (FLATPACK)
TOP VIEW
NC 1
COMP 2
BAL 3
IN- 4
IN+ 5
NC 6
NC 7
-
+
14 NC
13 V+
12 OUT
11 BAL
10 V-
9 NC
8 NC
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999




HS-2510RH pdf, 반도체, 판매, 대치품
HS-2510RH
Typical Performance Curves Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V (Continued)
120
100
80
60
40
300pF
20
0pF
30pF
100pF
0 1000pF
-20
10 100 1K 10K 100K 1M 10M 100M
FREQUENCY (Hz)
NOTE: External compensation components are not required for
stability, but may be added to reduce bandwidth, if desired.
FIGURE 11. OPEN LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
COMPENSATION PIN TO GROUND
4.4
4.2
VS = ±20
VS = ±15
VS = ±10
4.0
3.8
3.6
3.4
3.2
-50
-55
-25 0 25 50
TEMPERATURE (oC)
75
100 125
FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE
120
100 30o
80 60o
PHASE
60 90o
40 120o
20
GAIN
150o
0 180o
-20
10
100
1K 10K 100K 1M
FREQUENCY (Hz)
10M 100M
FIGURE 13. OPEN LOOP GAIN AND PHASE RESPONSE vs
FREQUENCY
V+
20k
RT
IN BAL
OUT
V-
NOTE: Tested offset adjustment is |VOS + 1mV| minimum referred
to output typical range is ±8mV for RT = 20kΩ.
FIGURE 14. SUGGESTED VOS ADJUSTMENT
1000
INPUT NOISE VOLTAGE
100
100
INPUT NOISE CURRENT
10
10
1
1 0.1
1 10 100 1K 10K 100K
FREQUENCY (Hz)
FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY
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HS-2510RH 전자부품, 판매, 대치품
Die Characteristics
DIE DIMENSIONS:
65 mils x 57 mils x 19 mils
(1660µm x 1950µm x 483µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 7kÅ ±0.7kÅ
Top Metallization:
Type: Aluminum
Thickness: 16kÅ ±2kÅ
Substrate:
Linear Bipolar, DI
Metallization Mask Layout
V+
HS-2510RH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 105A/cm2
Transistor Count:
40
Die Attach:
Temperature: CERDIP 460oC (Max)
HS-2510RH
OUT
BAL
V-
COMP
BAL
-IN +IN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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부품번호상세설명 및 기능제조사
HS-2510RH

Radiation Hardened High Slew Rate Operational Amplifier

Intersil Corporation
Intersil Corporation

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