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HS-303RH883S 데이터시트 PDF




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부품번호 HS-303RH883S 기능
기능 Radiation Hardened CMOS Analog Switches
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HS-303RH883S 데이터시트, 핀배열, 회로
September 1995
HS-302RH/883S, HS-303RH/883S,
HS-306RH/883S, HS-307RH/883S,
HS-384RH/883S, HS-390RH/883S
Radiation Hardened
CMOS Analog Switches
Features
Description
• This Circuit is Processed in Accordance to Mil-Std-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Radiation Hardened
- Functional Total Dose Exceeds 1 x 105 RAD Si
• Pin for Pin Compatible with Intersil HI-3XX Series
Analog Switches
• Analog Signal Range 15V
• Low Leakage
• Low RON
• No Latch Up
• Versions for 5V and 15V Digital Systems
• Low Operating Power
• Military Temperature Range -55oC to +125oC
Applications
• Sample and Hold i.e. Low Leakage Switching
• Op Amp Gain Switching i.e. Low ON Resistance
• Switched Capacitor Filters
• Low Level Switching Circuits
• Satellites
• Nuclear Reactor Controls
• Military Environments
The HS-3XXRH/883S family of analog switches are
monolithic devices fabricated using Radiation Hardened
CMOS technology and the Intersil dielectric isolation pro-
cess for latch-up free operation. Improved total dose hard-
ness is obtained by layout (thin oxide tabs extending to a
channel stop) and processing (hardened gate oxide). These
switches offer low-resistance switching performance for ana-
log voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of operat-
ing voltage and current. “ON” resistance also stays reason-
ably constant when exposed to radiation, being typically 30
pre-rad and 35post 100K RAD-Si. All devices provide
break-before-make switching.
The 6 devices in this switch series are differentiated by type
of switch action, pinout and digital logic levels. The HS-302/
303/384/390RH/883S switches have 5V digital inputs while
the HS-306/307RH/883S switches have 15V digital inputs.
All devices are available in Ceramic Flatpack and SBDIP
packages. The HS-3XXRH/883S switches can directly
replace the HI-3XX series devices.
Functional Diagram
IN N P
D
Ordering Information
PART NUMBER
HS1-302RH/883S
HS9-302RH/883S
HS1-302RH/Sample
HS9-302RH/Sample
HS1-303RH/883S
HS9-303RH/883S
HS1-303RH/Sample
HS9-303RH/Sample
HS1-306RH/883S ( Note 1)
HS9-306RH/883S ( Note 1)
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
-55oC to +125oC
-55oC to +125oC
SCREENING LEVEL
PACKAGE
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
Sample
14 Lead SBDIP
Sample
14 Lead Ceramic Flatpack
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
Sample
14 Lead SBDIP
Sample
14 Lead Ceramic Flatpack
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 1
Spec Number 518526
File Number 3067.1




HS-303RH883S pdf, 반도체, 판매, 대치품
Specifications HS-3XXRH/883S
Absolute Maximum Ratings
Reliability Information
Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V
+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
-VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V
Analog Input Overvoltages:
+VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V
-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V
Digital Input Overvoltage:
+VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V
-VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V
Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max . . . 40mA
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . .≤ +300oC
Thermal Resistance
θJA θJC
14 Lead SBDIP Package . . . . . . . . . . . . . 70oC/W 19oC/W
14 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W
16 Lead SBDIP Package . . . . . . . . . . . . . 70oC/W 19oC/W
16 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W
Maximum Package Power Dissipation at +125oC Ambient
14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W
16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC
16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (± VSupply) . . . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
MIN MAX UNITS
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
Leakage Current Into
the Source Terminal of
an “Off” Switch
+IS(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4
-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
- 50
2, 3
-55oC to +125oC
- 75
1
+25oC
- 50
2, 3
-55oC to +125oC
- 75
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Leakage Current into
the Drain Terminal of an
“Off” Switch
+ID(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4
-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Leakage Current from
an “On” Driver Into the
Switch (Drain & Source)
+ID(ON)
-ID(ON)
VS = VD = +14V,
S1/S2/S3/S4
VS = VD = -14V,
S1/S2/S3/S4
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Low Level Input
Address Current
High Level Input
Address Current
IAL All Channels VA = 0.8V
IAH All Channels VA = 4.0V
1
+25oC
-1 1
µA
2, 3
-55oC to +125oC -1 1
µA
1
+25oC
-1 1
µA
2, 3
-55oC to +125oC -1 1
µA
Spec Number 518526
4

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HS-303RH883S 전자부품, 판매, 대치품
Specifications HS-3XXRH/883S
TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
PARAMETER
Switch Input Capacitance
Driver Input Capacitance
Switch Output
Off Isolation
Crosstalk
Charge Transfer
SYMBOL
CIS(OFF)
CC1
CC2
COS
VISO
VCR
VCTE
(NOTE 1)
CONDITIONS
Measured Source to GND
VA = 0V
VA = 15V
Measured Drain to GND
VGEN = 1Vp-p, f = 1MHz
VGEN = 1Vp-p, f = 1MHz
VS = GND, CL = 0.01µF
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
LIMITS
MIN MAX
- 28
- 10
- 10
- 28
40 -
40 -
- 15
UNITS
pF
pF
pF
pF
dB
dB
mV
NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
PARAMETER
“Switch On” Resistance
Leakage Current Into the
Source Terminal of an “Off”
Switch
Leakage Current into the Drain
Terminal of an “Off” Switch
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
Positive Supply Current
Negative Supply Current
High Level Address Current
Low Level Address Current
Break-Before-Make Time
Delay (HS-303RH/883S and
HS390RH/883S Only)
Switch Turn-On Time
Switch Turn-Off Time
NOTES:
1. VAL = 0V; VAH = 5.0V
2. VAL = 0V; VAH = 4.0
SYMBOL
+RDS
-RDS
+IS(OFF)
-IS(OFF)
CONDITIONS
VD = 10V, IS = -10mA, S1/S2/S3/S4
VD = -10V, IS = 10mA, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = -14V, VD = +14V, S1/S2/S3/S4
+ID(OFF)
-ID(OFF)
-ID(ON)
-ID(ON)
VS = -14V, VD = +14V, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = VD = +14V, S1/S2/S3/S4
VS = VD = -14V, S1/S2/S3/S4
I(+)
I(-)
IAH
IAL
TOPEN
All Channels VA = 0.8V
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
All Channels VA = 0.8V
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
All Channels High
All Channels Low
RL = 300, VS = +3V, (Note 1)
TON
TOFF
RL = 300, VS = +3V, (Note 2)
RL = 300, VS = +3V, (Note 2)
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
LIMITS
MIN MAX
- 60
- 60
-100 100
-100 100
UNITS
nA
nA
-100
-100
-100
-100
100
100
100
100
nA
nA
nA
nA
- 100 µA
- 1 mA
-100
-100
-
-
µA
µA
-1 +1
-1 +1
2 300
µA
µA
ns
- 500 ns
- 450 ns
Spec Number 518526
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HS-303RH883S

Radiation Hardened CMOS Analog Switches

Intersil Corporation
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