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HS-6664RH-T 데이터시트 PDF




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부품번호 HS-6664RH-T 기능
기능 Radiation Hardened 8K x 8 CMOS PROM
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HS-6664RH-T 데이터시트, 핀배열, 회로
Data Sheet
HS-6664RH-T
July 1999 File Number 4609.1
Radiation Hardened 8K x 8 CMOS PROM
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-6664RH-T is a radiation hardened 64K
CMOS PROM, organized in an 8K word by 8-bit format. The
chip is manufactured using a radiation hardened CMOS
process, and utilizes synchronous circuit design techniques
to achieve high speed performance with very low power
dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a multiplexed
address/data bus structure. The output enable control (G)
simplifies system interfacing by allowing output data bus
control in addition to the chip enable control (E). All bits are
manufactured storing a logical “0” and can be selectively
programmed for a logical “1” at any bit location.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-666s4RH-T
are contained in SMD 5962-95626. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
ORDERING
INFORMATION
PART
NUMBER
TEMP.
RANGE
(oC)
5962R9562601TXC
HS1-6664RH-T
-55 to 125
HS1-6664RH/Proto
HS1-6664RH/Proto
-55 to 125
5962R9562601TYC
HS9-6664RH-T
-55 to 125
HS9-6664RH/Proto
HS9-6664RH/Proto
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
- No Latch-Up, SEU LET >100MeV/mg/cm2
• Transient Output Upset >5 x 108 RAD (Si)/s
• Fast Access Time - 35ns (Typical)
• Single 5V Power Supply, Synchronous Operation
• Single Pulse 10V Field Programmable NiCr Fuses
• On-Chip Address Latches, Three-State Outputs
• Low Standby Current <500µA (Pre-Rad)
• Low Operating Current <15mA/MHz
Pinouts
HS1-6664RH-T (SBDIP), CDIP2-T28
TOP VIEW
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ0 11
DQ1 12
DQ2 13
GND 14
28 VDD
27 P
26 NC
25 A8
24 A9
23 A11
22 G
21 A10
20 E
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
HS9-6664RH-T (FLATPACK), CDFP3-F28
TOP VIEW
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VDD
27 P
26 NC
25 A8
24 A9
23 A11
22 G
21 A10
20 E
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
P must be hardwired at all times to VDD, except during programming.
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.





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부품번호상세설명 및 기능제조사
HS-6664RH-T

Radiation Hardened 8K x 8 CMOS PROM

Intersil Corporation
Intersil Corporation

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