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PDF HN58X24512FPI Data sheet ( Hoja de datos )
| Número de pieza | HN58X24512FPI | |
| Descripción | Two-wire serial interface 512k EEPROM (64-kword 8-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN58X24512I
Two-wire serial interface
512k EEPROM (64-kword × 8-bit)
ADE-203-1239 (Z)
Preliminary
Rev. 0.0
Jan. 10, 2001
Description
HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-
byte page programming function to make it’s write operation faster.
Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone,
camcorders, audio equipment. Therefore, please contact Hitachi’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
• Single supply: 1.8 V to 5.5 V
• Two-wire serial interface (I2CTM serial bus*1)
• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
Standby: 3 µA (max)
Active (Read): 2 mA (max)
Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
1 page  
HN58X24512I
AC Characteristics (Ta = –40 to +85˚C, VCC = 1.8 to 5.5 V)
Test Conditions
• Input pules levels:
VIL = 0.2 × VCC
VIH = 0.8 × VCC
• Input rise and fall time: 20 ns
• Input and output timing reference levels: 0.5 × VCC
• Output load: TTL Gate + 100 pF
Parameter
VCC = 1.8 to 5.5 V
Symbol Min
Max
VCC = 2.5 to 5.5 V
Min Max Unit
Clock frequency
fSCL —
400 —
1000 kHz
Clock pulse width low
tLOW 1200 —
600 —
ns
Clock pulse width high
t HIGH
600
—
400 —
ns
Noise suppression time
tI — 50 — 50 ns
Access time
tAA 100 900 100 550 ns
Bus free time for next mode
tBUF 1200 —
500 —
ns
Start hold time
t HD.STA
600
—
250 —
ns
Start setup time
t SU.STA
600
—
250 —
ns
Data in hold time
t HD.DAT
0
—0
— ns
Data in setup time
t SU.DAT
100
—
100 —
ns
Input rise time
tR — 300 — 300 ns
Input fall time
tF — 300 — 100 ns
Stop setup time
t SU.STO
600
—
250 —
ns
Data out hold time
tDH 50 — 50 — ns
Write cycle time
tWC —
15 —
10 ms
Notes: 1. This parameter is sampled and not 100% tested.
2. tWC is the time from a stop condition to the end of internally controlled write cycle.
Notes
1
1
1
2
5
5 Page 
HN58X24512I
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address
code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to
distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by
the 3-bit device address code. The upper bit of device address can be set any data. The device address
code selects one device out of all devices which are connected to the bus. This means that the device is
selected if the inputted 3-bit device address code is equal to the corresponding hard-wired A1 to A0 pin
status. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated
if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device address
word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge. The
EEPROM turns to a stand-by state if the device code is not “1010” or device address code doesn’t coincide
with status of the correspond hard-wired device address pins A0 to A1.
Device Address Word
Device address word (8-bit)
Device code (fixed)
128k, 256k 1 0 1 0
Notes: 1. R/W=“1” is read and R/W = “0” is write.
2. Don’t care bit.
Device address code
0*2 A1
A0
R/W code*1
R/W
11
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| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet HN58X24512FPI.PDF ] | |
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