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HM-6617883 데이터시트 PDF




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부품번호 HM-6617883 기능
기능 2K x 8 CMOS PROM
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HM-6617883 데이터시트, 핀배열, 회로
HM-6617/883
March 1997
2K x 8 CMOS PROM
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Power Standby and Operating Power
- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA
- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns
• Industry Standard Pinout
• Single 5.0V Supply
• CMOS/TTL Compatible Inputs
• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads
• Synchronous Operation
• On-Chip Address Latches
• Separate Output Enable
• Operating Temperature Range . . . . . . -55oC to +125oC
The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in
a 2K word by 8-bit/word format with “Three-State” outputs.
This PROM is available in the standard 0.600 inch wide 24
pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC
standard 32 pad CLCC.
The HM-6617/883 utilizes a synchronous design technique.
This includes on-chip address latches and a separate output
enable control which makes this device ideal for applications
utilizing recent generation microprocessors. This design
technique, combined with the Intersil advanced self-aligned
silicon gate CMOS process technology offers ultra-low
standby current. Low ICCSB is ideal for battery applications
or other systems with low power requirements.
The Intersil NiCr fuse link technology is utilized on this and
other Intersil CMOS PROMs. This gives the user a PROM
with permanent, stable storage characteristics over the full
industrial and military temperature voltage ranges. NiCr fuse
technology combined with the low power characteristics of
CMOS provides an excellent alternative to standard bipolar
PROMs or NMOS EPROMs.
Ordering Information
All bits are manufactured storing a logical “0” and can be
selectively programmed for a logical “1” at any bit location.
PACKAGE
SBDIP
SLIM SBDIP
CLCC
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
90ns
HM1-6617B/883
HM6-6617B/883
HM4-6617B/883
120ns
HM1-6617B/883
HM6-6617B/883
HM4-6617B/883
PACKAGE NO.
D24.6
D24.3
J32.A
Pinouts
HM-6617/883 (SBDIP)
TOP VIEW
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
Q0 9
Q1 10
Q2 11
GND 12
24 VCC
23 A8
22 A9
21 P
20 G
19 A10
18 E
17 Q7
16 Q6
15 Q5
14 Q4
13 Q3
HM-6617/883 (CLCC)
TOP VIEW
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
26 P
A2 9
25 G
A1 10
24 A10
A0 11
23 E
NC 12
22 Q7
Q0 13
21 Q6
14 15 16 17 18 19 20
PIN DESCRIPTION
PIN DESCRIPTION
NC No Connect
A0-A10
Address Inputs
E Chip Enable
Q Data Output
VCC
G
Power (+5V)
Output Enable
P (Note) Program Enable
NOTE: P should be hardwired to VCC
except during programming.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
6-250
File Number 3016.1




HM-6617883 pdf, 반도체, 판매, 대치품
HM-6617/883
TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
Device Guaranteed and 100% Tested
PARAMETER
Read Cycle Time
SYMBOL
(NOTES 1, 2, 4)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
LIMITS
HM-6617B/883 HM-6617/883
MIN MAX MIN MAX UNITS
TELEL VCC = 4.5V and 5.5V
9, 10, 11
-55oC TA +125oC 136
-
160
-
ns
NOTES:
1. All voltages referenced to Device GND.
2. AC measurements assume transition time 5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equiva-
lent load and CL 50pF.
3. Typical derating = 5mA/MHz increase in ICCOP.
4. All tests performed with P hardwired to VCC.
5. TAVQV = TELQV + TAVEL.
6. Tested as follows: f = 1MHz, VIH = 2.4V, VIL = 0.8V, IOH = -1mA, IOL = +1mA, VOH 1.5V, VOL 1.5V.
TABLE 3. HM-6617/883 AC AND DC ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
Input Capacitance
I/O Capacitance
Chip Enable Time
Output Enable Time
Chip Disable Time
Output Disable Time
Output High Voltage
SYMBOL
(NOTES 1, 2)
CONDITIONS
LIMITS
HM-6617B/883
NOTES TEMPERATURE MIN MAX
CIN VCC = Open, f = 1MHz, All
2, 3
Measurements Referenced to
Device GND
+25oC
- 10
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 4
2, 5
+25oC
+25oC
- 12
- 10
CI/O
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 3
+25oC
- 12
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 4
2, 5
+25oC
+25oC
- 14
- 12
TELQX VCC = 4.5V and 5.5V
2
-55oC TA +125oC
5
-
TGLQX VCC = 4.5V and 5.5V
2
-55oC TA +125oC
5
-
TEHQZ VCC = 4.5V and 5.5V
2 -55oC TA +125oC -
45
TGHQZ VCC = 4.5V and 5.5V
2 -55oC TA +125oC -
40
VOH2 VCC = 4.5V, IO = 100µA
2 -55oC TA +125oC VCC- -
1V
LIMITS
HM-6617/883
MIN MAX UNITS
- 10 pF
- 12 pF
- 10 pF
- 12 pF
-
-
5
5
-
-
VCC-
1V
14
12
-
-
50
50
-
pF
pF
ns
ns
ns
ns
V
NOTES:
1. All tests performed with P hardwired to VCC.
2. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are char-
acterized upon initial design changes which would affect these characteristics.
3. Applies to 0.600 inch SBDIP device types only.
4. Applies to 0.300 inch SBDIP device types only.
5. Applies to Ceramic Leadless Chip Carrier (CLCC) device types only.
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HM-6617883 전자부품, 판매, 대치품
Die Characteristics
DIE DIMENSIONS:
140 x 232 x 19 ± 1mils
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ ± 15kÅ
Metallization Mask Layout
A3
A2
HM-6617/883
GLASSIVATION:
Type: SiO2
Thickness: 7kÅ ± 9kÅ
WORST CASE CURRENT DENSITY:
1.7 x 105 A/cm2
A4 A5
HM-6617/883
A6 A7 VCC A8 A9
P
G
A10
A1
A0
Q0 Q1 Q2 GND Q3 Q4 Q5 Q6
E
Q7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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부품번호상세설명 및 기능제조사
HM-6617883

2K x 8 CMOS PROM

Intersil Corporation
Intersil Corporation

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