Datasheet.kr   

BAS116 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS116
기능 SURFACE MOUNT LOW LEAKAGE DIODE
제조업체 Diodes Incorporated
로고 Diodes Incorporated 로고 



전체 3 페이지

		

No Preview Available !

BAS116 데이터시트, 핀배열, 회로
BAS116
SURFACE MOUNT LOW LEAKAGE DIODE
Features
Mechanical Data
Surface Mount Package Ideally Suited for Automated Insertion
Very Low Leakage Current
Lead Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: Solderable per MIL-STD-202, Method
208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
TOP VIEW
Internal Schematic
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Value
85
60
215
500
4.0
1.0
0.5
Unit
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1) @TA = 25°C
Thermal Resistance Junction to Ambient Air (Note 1) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
85
V IR = 100μA
0.90
IF = 1.0mA
VF
1.0
1.1
V IF = 10mA
IF = 50mA
1.25
IF = 150mA
IR
5.0
80
nA VR = 75V
nA VR = 75V, Tj = 150°C
CT 2 pF VR = 0, f = 1.0MHz
trr
3.0
μs
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Part mounted on FR-4 PC board with pad layout as shown on page 3.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS116
Document number: DS30233 Rev. 9 - 2
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated






구       성총 3 페이지
다운로드[ BAS116.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BAS11

Controlled avalanche rectifiers

NXP
NXP
BAS116

Low-leakage diode

NXP
NXP

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵