|
|
Datasheet BAS125 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAS125 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) Silicon Schottky Diodes
q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 O |  Siemens Semiconductor Group | diode |
| 2 | BAS125-04 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) Silicon Schottky Diodes
q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 O | Siemens Semiconductor Group | diode |
| 3 | BAS125-04W | Preliminary data Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping application) BAS 125W Silicon Schottky Diodes
Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handl | Siemens Semiconductor Group | diode |
| 4 | BAS125-04W | Silicon Schottky Diodes BAS125W
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring Low forward voltage
3
2 1
BAS125W BAS125-04W
3
1 3
EHA07002
VSO05561
BAS125-05W
3
BAS125-06W
3
1
2
EHA07005
1
2
EHA07004
1
2
EHA070 |  Infineon Technologies AG | diode |
| 5 | BAS125-05 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) Silicon Schottky Diodes
q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 O | Siemens Semiconductor Group | diode |
BAS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
VOLTAGE 100 Volts
FEATURES
• Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICA  Pan Jit International diode | | |
| 2 | BAS101 | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc  NXP Semiconductors diode | | |
| 3 | BAS101S | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 4 | BAS11 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o NXP Semiconductors rectifier | | |
| 5 | BAS116 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES z Low leakage current applications z Medium speed switching times
MARKING: JV
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re  JCET diode | | |
| 6 | BAS116 | LOW LEAKAGE SWITCHING DIODE BAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetiti  SEMTECH diode | | |
| 7 | BAS116 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance Pan Jit International diode | |
| Esta página es del resultado de búsqueda del BAS125. Si pulsa el resultado de búsqueda de BAS125 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |