Datasheet.kr   

BAS16 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS16
기능 High-speed switching diodes
제조업체 NXP
로고 NXP 로고 



전체 21 페이지

		

No Preview Available !

BAS16 데이터시트, 핀배열, 회로
BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAS16
SOT23
-
BAS16H
SOD123F -
BAS16J
SOD323F SC-90
BAS16L
SOD882 -
BAS16T
BAS16VV
SOT416
SOT666
SC-75
-
BAS16VY
BAS16W
BAS316
BAS516
SOT363
SOT323
SOD323
SOD523
SC-88
SC-70
SC-76
SC-79
JEDEC
TO-236AB
-
-
Configuration
single
single
single
- single
- single
- triple isolated
- triple isolated
- single
- single
- single
Package
configuration
small
small and flat lead
very small and flat
lead
leadless ultra
small
ultra small
ultra small and flat
lead
very small
very small
very small
ultra small and flat
lead
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Repetitive peak reverse voltage:
VRRM 100 V
AEC-Q101 qualified
Low capacitance
Reverse voltage: VR 100 V
Small SMD plastic packages
1.3 Applications
High-speed switching
General-purpose switching




BAS16 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
IF forward current
BAS16
[1] -
BAS16H
BAS16L
[2] -
BAS16T
[1] -
BAS16VV
BAS16VY
[1][3] -
BAS16W
[1] -
BAS16J
BAS316
BAS516
[1] -
IFRM
repetitive peak forward
tp 0.5 ms;
-
current
  0.25
IFSM
Ptot
non-repetitive peak forward
current
square wave;
Tj(init) = 25 °C
tp = 1 s
tp = 1 ms
tp = 1 s
total power dissipation
BAS16
BAS16H
Tamb 25 C
Tamb 25 C
-
-
-
[1] -
[2] -
[5] -
Per device
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
Tamb 25 C
Tamb 25 C
Tsp 90 C
Tamb 25 C
Tsp 85 C
Tamb 25 C
Tsp 90 C
Tsp 90 C
[5] -
[2] -
[1][4] -
[1][3] -
[1][3][6] -
[1] -
[1][4] -
[1][4] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max Unit
215 mA
215 mA
155 mA
200 mA
175 mA
250 mA
500 mA
4A
1A
0.5 A
250 mW
380 mW
830 mW
550 mW
250 mW
170 mW
180 mW
250 mW
200 mW
400 mW
500 mW
150
+150
+150
C
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Single diode loaded.
[4] Soldering point of cathode tab.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[6] Soldering points at pins 4, 5 and 6.
BAS16_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 24 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 21

4페이지










BAS16 전자부품, 판매, 대치품
NXP Semiconductors
BAS16 series
High-speed switching diodes
103
IF
(mA)
102
006aab132
10
(1) (2) (3) (4)
1
101
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(μA)
10
006aab133
(1)
1 (2)
101
102
(3)
103
104
(4)
105
0
20 40 60 80 100
VR (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse
voltage; typical values
102
IFSM
(A)
10
mbg704
1
101
1
10 102 103 104
tp (μs)
Based on square wave currents.
Tj(init) = 25 C
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.8
Cd
(pF)
0.6
mbg446
0.4
0.2
0
04 8
f = 1 MHz; Tamb = 25 C
12 VR (V) 16
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 24 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 21

7페이지



구       성총 21 페이지
다운로드[ BAS16.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BAS100ATB6

SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES

Pan Jit International
Pan Jit International
BAS101

High Voltage Switching Diodes

NXP
NXP

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵