|
|
|
부품번호 | BAS16TT1 기능 |
|
|
기능 | Silicon Switching Diode | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
BAS16TT1
Preferred Device
Advance Information
Silicon Switching Diode
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
IF
IFM(surge)
75
200
500
V
mA
mA
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation, (1)
TA = 25°C
Operating and Storage Junction
Temperature Range
Symbol
PD
TJ, Tstg
Max
150
–55 to
+150
Unit
mW
°C
Thermal Resistance,
Junction to Ambient
RθJA
833 °C/W
(1) Device mounted on FR–4 glass epoxy printed circuit board using the
minimum recommended footpad.
http://onsemi.com
3
CATHODE
1
ANODE
3
2
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
A6
ORDERING INFORMATION
Device
Package
Shipping
BAS16TT1
SOT–416 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 0
1
Publication Order Number:
BAS16TT1/D
100
10
1.0
0.1
0.2
BAS16TT1
10
TA = 85°C
TA = 25°C
TA = – 40°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
1.0
0.1
0.01
0.001
1.2 0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
8
http://onsemi.com
4
4페이지 BAS16TT1
PACKAGE DIMENSIONS
SC–75 (SC–90, SOT–416)
CASE 463–01
ISSUE B
–A–
S
2
D 3 PL
0.20 (0.008) M B
3
1
G –B–
K 0.20 (0.008) A
JC
LH
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
http://onsemi.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BAS16TT1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BAS16TT1 | Silicon Switching Diode | ON Semiconductor |
BAS16TT1G | Silicon Switching Diode | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |