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Número de pieza | BAS20 | |
Descripción | Small Signal Diodes | |
Fabricantes | General Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS20 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! BAS19, BAS20, BAS21
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
12
Top View
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
FEATURES
♦ Silicon Planar Epitaxial High-Speed
Diodes
♦ For switching and general purpose
applications.
♦ These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 s
Average Rectified Forward Current
(averaged over any 20 ms period)
Forward DC Current at Tamb = 25 °C
Repetitive Peak Forward Current
Power Dissipation up to Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Measured under pulse conditions; Pulse time = tp ≤ 0.3 ms.
2) Device on fiberglass substrate, see layout.
Symbol
VR
VR
VR
VRRM
VRRM
VRRM
IFSM
IFSM
IF(AV)
IF
IFRM
Ptot
Tj
TS
Value
100
150
200
120
200
250
2.5
0.5
2001)
2002)
625
2002)
150
– 65 to +150
Unit
V
V
V
V
V
V
A
A
mA
mA
mA
mW
°C
°C
4/98
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BAS20.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS20 | Small Signal Diodes | General Semiconductor |
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