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부품번호 | BAS28 기능 |
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기능 | High-speed double diode ( Reverse voltage : 75V ) | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
High switching speed: trr ≤ 4 ns
Reverse voltage: VR ≤ 75 V
Repetitive peak reverse voltage: VRRM ≤ 85 V
Repetitive peak forward current: IFRM ≤ 500 mA
AEC-Q101 qualified
Small SMD package
1.3 Applications
High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 75 V
Min Typ
[1] -
-
-
[2] -
-
-
-
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
215
1
75
4
Unit
mA
μA
V
ns
NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR reverse current
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr reverse recovery time
VFR forward recovery voltage
Min Typ
--
--
--
--
--
--
--
--
--
[1] -
-
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1V
1.25 V
30 nA
1 μA
30 μA
50 μA
1.5 pF
4 ns
1.75 V
300
IF
(mA)
200
mbg382
(1) (2) (3)
102
IFSM
(A)
10
mbg704
100 1
0
0
1 VF (V)
2
(1) Tj = 150 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
10−1
1
10 102 103 104
tp (μs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
9. Package outline
BAS28
High-speed double diode
3.0
2.8
1.9
43
1.1
0.9
2.5 1.4
2.1 1.2
0.45
0.15
1
0.88
0.78
Dimensions in mm
1.7
Fig 8. Package outline BAS28 (SOT143B)
2
0.48
0.38
0.15
0.09
04-11-16
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
BAS28
SOT143B 4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-215
-235
[1] For further information and the availability of packing methods, see Section 14.
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
7 of 12
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