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PDF BAS32L Data sheet ( Hoja de datos )
| Número de pieza | BAS32L | |
| Descripción | High-speed diode | |
| Fabricantes | NXP Semiconductors | |
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BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: trr ≤ 4 ns
Reverse voltage: VR ≤ 75 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Repetitive peak forward current: IFRM ≤ 450 mA
Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IFRM
VR
VF
trr
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
reverse recovery time
Conditions
IF = 100 mA
Min Typ Max Unit
[1] - - 200 mA
- - 450 mA
- - 75 V
- - 1000 mV
[2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
1 page  
NXP Semiconductors
BAS32L
High-speed switching diode
1.2
Cd
(pF)
1.0
mgd004
0.8
0.6
0.4
0
10
VR (V)
20
f = 1 MHz; Tj = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
t
+ IF
trr
t
(1)
output signal
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Oscilloscope: Rise time tr = 0.35 ns
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I 1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr tp
input signal
V
VFR
tt
output signal
mga882
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS32L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 20 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BAS32L
High-speed switching diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 January 2011
Document identifier: BAS32L
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BAS32L.PDF ] | |
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